Methods of forming thermo-mechanical sensor
First Claim
1. A method of forming an integrated sensor for sensing a temperature variation, the method comprising the steps of:
- forming a switch detecting circuit region; and
forming a sensor switching region connected to and positioned adjacent the switch detecting circuit region, the sensor switching region being formed by;
forming a first conducting layer of material on a support so as to define a fixed contact layer, forming a sacrificial layer on the first conducting layer, forming a second conducting layer on the sacrificial layer; and
forming a third conducting layer on the second conducting layer, the second conducting layer having a different thermal expansion coefficient than the first conducting layer, and wherein the first and second conducting layers define a floating contact.
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Accused Products
Abstract
An integrated circuit and method are provided for sensing activity such as temperature variations in a surrounding environment. The integrated released beam sensor preferably includes a switch detecting circuit region and a sensor switching region connected to the switch detecting circuit region. The sensor switching region preferably includes a fixed contact layer, a sacrificial layer on the fixed contact layer, and a floating contact on the sacrificial layer and having portions thereof overlying the fixed contact layer in spaced relation therefrom in an open switch position and extending lengthwise generally transverse to a predetermined direction. The floating contact preferably includes at least two layers of material. Each of the at least two layers have a different thermal expansion coefficient so that the floating contact displaces in the predetermined direction responsive to a predetermined temperature variation so as to contact the fixed contact layer and thereby form a closed switch position. The methods of forming an integrated sensor advantageously are preferably compatible with known integrated circuit manufacturing processes, such as for CMOS circuit manufacturing, with only slight variations therefrom.
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Citations
16 Claims
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1. A method of forming an integrated sensor for sensing a temperature variation, the method comprising the steps of:
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forming a switch detecting circuit region; and
forming a sensor switching region connected to and positioned adjacent the switch detecting circuit region, the sensor switching region being formed by;
forming a first conducting layer of material on a support so as to define a fixed contact layer, forming a sacrificial layer on the first conducting layer, forming a second conducting layer on the sacrificial layer; and
forming a third conducting layer on the second conducting layer, the second conducting layer having a different thermal expansion coefficient than the first conducting layer, and wherein the first and second conducting layers define a floating contact. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming an integrated sensor, the method comprising the steps of:
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forming a switch detecting circuit region on a substrate; and
then forming a sensor switching region connected to the switch detecting circuit region, the sensor switching region being formed by at least the steps of;
providing a support, the support including the substrate and an insulating layer formed on the substrate, forming a first conducting layer of material on the insulating layer of the support layer so as to define a fixed contact layer, depositing a sacrificial layer on the first conducting layer, depositing a second conducting layer on the sacrificial layer, depositing a third conducting layer on the second conducting layer, and removing at least unwanted portions of the sacrificial layer to release the second conducting layer so as to define a released beam overlying the fixed contact layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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Specification