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Wafer of semiconductor material for fabricating integrated devices, and process for its fabrication

  • US 6,171,931 B1
  • Filed: 10/06/1998
  • Issued: 01/09/2001
  • Est. Priority Date: 12/15/1994
  • Status: Expired due to Term
First Claim
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1. A process for fabricating a wafer of semiconductor material comprising the steps of:

  • forming, on a first silicon layer, an intermediate insulating layer made of a monocrystalline material selected from a group comprising silicon carbide, silicon nitride and ceramic materials; and

    bonding a second silicon layer to said insulating layer.

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