Process for producing an epitaxial layer with laterally varying doping
First Claim
1. A process for forming over a top surface of a monocrystalline semiconductive body an epitaxial semiconductive layer whose conductivity characteristics vary laterally across the surface comprising the steps of:
- forming over the top surface of the monocrystalline semiconductive body a patterned insulating layer;
growing over the top surface a first semiconductive layer that forms monocrystalline regions where it overlies the monocrystalline semiconductive body and polycrystalline regions where it overlies the patterned insulating layer;
removing selectively the polycrystalline regions and the insulating layer; and
growing over the top surface a second semiconductive layer with conductivity characteristics different from that of the first semiconductive layer for forming essentially monocrystalline regions of said different conductivity characteristic between the monocrystalline regions of said first semiconductive layer.
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Abstract
A process for producing an epitaxial layer with laterally varying doping includes the following steps: (a) applying a patterned insulator layer to a semiconductor body; (b) growing a first epitaxial layer on the semiconductor body and the patterned insulator layer so that monocrystalline regions are formed over the semiconductor body and polycrystalline regions are formed over the patterned insulator layer, the angle of inclination (α) of the interface between the monocrystalline regions and the polycrystalline regions depending on the grain size of the polycrystalline regions; (c) removing the polycrystalline regions and the insulator layer, and (d) growing a second epitaxial layer which, together with the monocrystalline regions of the first epitaxial layer, forms the epitaxial layer.
141 Citations
13 Claims
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1. A process for forming over a top surface of a monocrystalline semiconductive body an epitaxial semiconductive layer whose conductivity characteristics vary laterally across the surface comprising the steps of:
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forming over the top surface of the monocrystalline semiconductive body a patterned insulating layer;
growing over the top surface a first semiconductive layer that forms monocrystalline regions where it overlies the monocrystalline semiconductive body and polycrystalline regions where it overlies the patterned insulating layer;
removing selectively the polycrystalline regions and the insulating layer; and
growing over the top surface a second semiconductive layer with conductivity characteristics different from that of the first semiconductive layer for forming essentially monocrystalline regions of said different conductivity characteristic between the monocrystalline regions of said first semiconductive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A process for producing an epitaxial layer with laterally varying doping comprising the steps of:
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applying a patterned insulator layer to a semiconductor body;
growing a first epitaxial layer on the semiconductor body and the patterned insulator layer so that monocrystalline regions are formed over the semiconductor body and polycrystalline regions are formed over the patterned insulator layer, the angle of inclination (α
) of the interface between the monocrystalline regions and the polycrystalline regions depending on the grain size of the polycrystalline regions;
removing the polycrystalline regions and the insulator layer; and
growing a second epitaxial layer which, together with the monocrystalline regions of the first epitaxial layer, forms the epitaxial layer.
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