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Annealing an amorphous film using microwave energy

  • US 6,172,322 B1
  • Filed: 11/07/1997
  • Issued: 01/09/2001
  • Est. Priority Date: 11/07/1997
  • Status: Expired due to Term
First Claim
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1. A system for annealing a film on a substrate in a vacuum processing chamber comprisinga plasma enhanced chemical vapor deposition chamber having a substrate support centered in the chamber, a sidewall opening in the chamber for ingress and egress of a substrate to be processed in the chamber while mounted on the substrate support;

  • a gas inlet manifold having a plurality of openings for the passage of processing gas into the chamber mounted opposed to and spaced from the substrate support;

    an RF power supply connected to said chamber to form a plasma therein from said processing gas to deposit a film on said substrate;

    a plurality of microwave generators mounted above said chamber, each connected to a waveguide mounted so as to direct microwaves uniformly over the surface of said film through a plurality of windows in said chamber, said microwaves having a frequency that is absorbed by said film and that is not absorbed by said substrate.

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