MOS transistor with shield coplanar with gate electrode
First Claim
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1. A MOS transistor comprising:
- a) a silicon substrate of one conductivity type, b) a well region of a second conductivity type in a surface of the substrate, c) source region and a channel region in the well region, d) a gate oxide layer on the surface of the well region, e) a gate electrode on the gate oxide layer with at least a portion of the gate electrode being over the channel region, and f) a shield electrode on the gate oxide layer adjacent to and spaced from the gate electrode and at least partially coplanar with the portion of the gate electrode over the channel.
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Abstract
A MOS transistor including a gate electrode on a gate oxide over a channel region between a source region and a drain region also includes a shield electrode at least partially on the gate oxide adjacent to, self-aligned with, and at least partially coplanar with the gate electrode and between the gate electrode and drain region. Placing the shield electrode on the gate oxide improves the gate-drain shielding, reduces the gate-drain capacitance, Cgd, and reduces hot electron related reliability hazard.
28 Citations
7 Claims
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1. A MOS transistor comprising:
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a) a silicon substrate of one conductivity type, b) a well region of a second conductivity type in a surface of the substrate, c) source region and a channel region in the well region, d) a gate oxide layer on the surface of the well region, e) a gate electrode on the gate oxide layer with at least a portion of the gate electrode being over the channel region, and f) a shield electrode on the gate oxide layer adjacent to and spaced from the gate electrode and at least partially coplanar with the portion of the gate electrode over the channel. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification