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Tuneable holding voltage SCR ESD protection

  • US 6,172,404 B1
  • Filed: 10/30/1998
  • Issued: 01/09/2001
  • Est. Priority Date: 10/31/1997
  • Status: Expired due to Term
First Claim
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1. A semiconductor-controlled rectifier comprising:

  • (a) a lightly doped substrate of a first conductivity type;

    (b) a region of a second conductivity type, wherein the boundaries of said region of said second conductivity type define the edges of a well within said substrate;

    (c) a highly doped region of said second conductivity type within said substrate outside of said well;

    (d) a highly doped region of said first conductivity type, within said well;

    (e) a highly doped region of said second conductivity type disposed at the edge of said well; and

    (f) a highly doped region of said second conductivity type within said well and interposed between element (d) and (e).

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