Methods and apparatus for controlling ion energy and plasma density in a plasma processing system

• US 6,174,450 B1
• Filed: 04/16/1997
• Issued: 01/16/2001
• Est. Priority Date: 04/16/1997
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Williams, Norman, Patrick, Roger
• Primary Examiner(s): DANG, THI D
• Application Number:
  US08/843,476
• Time in Patent Office: 1,371 Days
• Field of Search: 156/345, 118/723 I, 118/723 E, 315/111.21, 204/298.06, 204/298.34, 204/298.32, 216/59, 216/61, 216/68, 216/71, 438/10, 438/17, 438/729
• US Class Current: 216/61
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32706 Polarising the substrate
• CPC Class Codes: H01J 37/3299 Feedback systems

Abstract

A plasma processing system includes a plasma reactor, a first power circuit, a second power circuit and a feedback circuit. The first power circuit supplies a first radio frequency (rf) energy to the plasma reactor that is suitable for creating a direct current bias on a workpiece positioned within a plasma chamber. The second power circuit supplies a second rf energy to the plasma reactor that is suitable for striking a plasma within the plasma chamber. The feedback circuit is coupled to control the first power circuit by detecting at least one parameter associated with the first rf energy and providing a feedback control signal to the first power circuit. The first power circuit adjusts the first rf energy so that a level of energy of the ionized particles within the plasma chamber is substantially controlled via the direct current bias created by the first rf energy. A second feedback circuit can also be provided to control the second power circuit so that a level of plasma density within the plasma chamber is substantially controlled.

Claims

1. A plasma processing system for processing a workpiece comprising:

a plasma reactor coupled to a plasma chamber interior;

a workpiece holder in the plasma chamber interior;

a first power circuit configured to supply a first radio frequency (rf) energy within the plasma chamber, the first rf energy being suitable for creating a direct current bias on a workpiece on the workpiece holder within the plasma chamber;

a second power circuit configured to supply a second rf energy within the plasma chamber, the second rf energy being suitable for striking a plasma within the plasma chamber by ionizing particles within the plasma chamber for treating the workpiece;

a feedback circuit coupled to the first power circuit and configured to detect at least one rf parameter associated with the first rf energy and output a feedback control signal based thereon to the first power circuit,

the first power circuit being connected to be responsive to the feedback control signal for supplying the first rf energy to the plasma chamber such that a level of energy of the ionized particles within the plasma chamber is substantially controlled via only the direct current bias.

2. The plasma processing system as recited in claim 1 wherein the first power circuit includes an electrode within the plasma chamber and is configured to supply a first rf signal to the electrode.

3. The plasma processing system as recited in claim 2 wherein the first power circuit further includes:

a first rf power supply coupled to the feedback control circuit and responsive to the feedback control signal, the first rf power supply generating a first unmatched rf signal; and

a first match network coupled to the first rf power supply and configured to receive the first unmatched rf signal and output the first rf signal to the electrode.

4. The plasma processing system as recited in claim 3 wherein the parameter of the first rf energy is selected from the group of a current, a voltage, a power, an impedance, and a phase angle associated with the first rf signal.

5. The plasma processing system as recited in claim 4 wherein the feedback circuit includes:

a sensor arranged between the match network and the electrode and configured to output at least one sensed parameter signal; and

a controller coupled to the sensor and the first rf power supply and configured to output the feedback control signal based on the sensed parameter signal and a desired parameter level.

6. The plasma processing system as recited in claim 5 wherein the sensor is an rf probe.

7. The plasma processing system as recited in claim 5 wherein the controller is a computer system.

8. The plasma processing system as recited in claim 5 wherein the feedback circuit operates to maintain the first rf signal at a substantially constant root-mean-square voltage level.

9. The plasma processing system as recited in claim 1 wherein the second power circuit includes a coil arranged in proximity to the plasma chamber and is configured to supply a second rf signal to the coil.

10. The plasma processing system as recited in claim 9 wherein the second power circuit further includes:

a second rf power supply coupled that generates a second unmatched rf signal; and

a second match network coupled to the second rf power supply and configured to receive the second unmatched rf signal and output the second rf signal to the coil.

11. The plasma processing system as recited in claim 10 further comprising:

a second feedback circuit coupled to the second power circuit and configured to detect at least one parameter of the second rf energy and output a second feedback control signal based thereon to the second power circuit,

wherein the second power circuit is responsive to the second feedback control signal in supplying the second rf energy to the plasma chamber such that a level of plasma density within the plasma chamber is substantially controlled via only the second rf signal.

12. The plasma processing system as recited in claim 1 wherein the second rf power supply is coupled to the second feedback control circuit and responsive to the second feedback control signal.

13. The system of claim 1 wherein the detected rf parameter is rf voltage the first power circuit supplies to create the direct current bias.

14. An apparatus for controlling a direct current (dc) bias in a plasma processing system for processing a workpiece, the apparatus comprising:

a first power circuit arranged to supply a first rf power to a workpiece on a workpiece holder within the plasma processing system, the first power circuit including a control circuit for monitoring at least one rf parameter associated with the first rf power; and

a second power circuit arranged to supply a second rf power to the workpiece within the plasma processing system,

wherein the first and second rf powers are substantially decoupled from one another by the control circuit such that the dc bias is controlled via the first rf power independently of the second rf power.

15. The apparatus as recited in claim 14 wherein the first power circuit includes an electrode arranged within the plasma processing system to create the dc bias on a workpiece portion of the load when the first rf signal is applied.

16. The apparatus as recited in claim 15 wherein the second power supply includes a coil arranged within the plasma processing system to create a plasma from an ionizable portion of the load when the second rf signal is applied.

17. The apparatus as recited in claim 14 wherein the second power circuit includes a second power control circuit that monitors at least one parameter of the second rf signal and further decouples the first and second rf signals as applied to the load, such that a plasma density of a plasma created within the plasma processing system is independently controlled via the second rf signal.

18. The apparatus of claim 14 wherein the monitored rf parameter is rf voltage the first power circuit supplies to the workpiece.

19. The apparatus claim 14 wherein the control circuit is arranged to control an output parameter of the first power circuit in response to the monitored rf parameter.

20. The apparatus of claim 19 wherein the monitored rf parameter is rf voltage the first power circuit supplies to the workpiece.

21. A method of using a control circuit so there is control of ion energy and plasma density on a workpiece in a plasma reactor responsive to a first power circuit that applies rf power to an electrode in the plasma reactor coupled to the workpiece and a second power circuit that applies rf power to plasma in the reactor, the method comprising:

measuring at least one rf parameter associated with the rf power the first power circuit applies to the electrode coupled with the workpiece in the plasma reactor; and

adjusting a rf parameter associated with the rf power the first power circuit applies to the electrode in response to the measured parameter and a specified parameter level, the adjusting step being performed so the ion energy is controlled independently of the power the second power circuit applies to plasma in the reactor, the output of the first power circuit causing a direct current (dc) bias to be created at the electrode, and controlling the second power circuit so the plasma density is controlled independently of the power the first power circuit applies to the plasma.

22. The method as recited in claim 21 further comprising:

providing a first radio frequency (rf) signal to the plasma reactor with the first power circuit;

creating the dc bias with the first rf signal on a workpiece located within a plasma chamber of the plasma reactor;

providing a second rf signal to the plasma reactor with the second power circuit;

striking a plasma within the plasma reactor with the second rf signal, the plasma including ionized particles;

detecting a parameter of the first rf signal with an rf sensor, the parameter being detected after the first rf signal has been generated and conditioned by a match network within the first power circuit;

comparing the parameter to a specified parameter level; and

modifying the first rf signal based on the comparison results such that the level of energy of the ionized particles contacting the workpiece is substantially controlled via only the magnitude of the direct current bias as established by the first rf signal.

23. The method as recited in claim 22 wherein the parameter of the first rf signal is selected from the group of a current, a voltage, a power, an impedance, and a phase angle.

24. The method as recited in claim 23 for further controlling plasma density, further comprising:

detecting a second parameter of the second rf signal, the second parameter being detected after the second rf signal has been generated and conditioned by a second match network within the second power circuit;

comparing the second parameter to a second desired parameter level; and

modifying the second rf signal based on the second comparison results such that the density of the plasma within the reactor is substantially controlled via only the magnitude of the second rf signal.

25. The method of claim 21 wherein the first power circuit applies rf power to the electrode, and a measured parameter associated with power the first power circuit applies to the electrode is an rf parameter in a line coupling power to the electrode.

26. The method of claim 25 wherein the rf parameter is rf voltage.

27. Apparatus for controlling an ac plasma for treating a workpiece in a plasma processing chamber including a workpiece holder having an electrode comprising a first ac source, a first match network connected between the first ac source and the electrode;

the first ac source, first match network and electrode being constructed and arranged to cause ac to be coupled between the plasma and the workpiece via the electrode to cause application of a bias voltage to the workpiece, the plasma being included in a load for the first ac source;

a reactance coupled with the plasma processing chamber for exciting gas in the chamber into a plasma;

a second ac source;

a second match network connected between the reactance and the second ac source to cause the plasma to be a load for the second ac source;

a sensor arrangement for an electric parameter of the load; and

a controller arrangement responsive to the sensor arrangement for controlling ac the first ac source applies to the load via the electrode and for controlling ac the second ac source applies to the load via the reactance.

28. The apparatus of claim 27 wherein the electric parameter of the first ac source is output power.

29. The apparatus of claim 27 wherein the controller arrangement is connected to be responsive to the sensor arrangement for controlling output power of the first and second sources.

30. The apparatus of claim 27 wherein the sensor arrangement is arranged to sense an electric parameter of the load as seen by looking from output terminals of the first match network toward the electrode and the controller arrangement is connected to be responsive to the sensed electric parameter of the load as seen by looking from output terminals of the first match network toward the electrode to control an electric parameter of the first ac source.

31. The apparatus of claim 30 wherein the electric parameter of the first ac source is output power.

32. The apparatus of claim 31 wherein the sensor arrangement for controlling ac applied by the second ac source to the load via the reactance is arranged to sense an electric parameter of the load on the second ac source and the controller arrangement is connected to be responsive to the sensed electric parameter of the load on the second ac source for controlling an electric parameter of the second ac source.

33. The apparatus of claim 32 wherein the controller arrangement is connected to be responsive to the sensed electric parameter of the load as seen by looking from output terminals of the first match network toward the electrode and the sensed electric parameter of the load on the second ac source for respectively controlling the electric parameter of the first ac source and the electric parameter of the second ac source so the electric parameters of the first and second sources are controlled independently of each other.

34. The apparatus of claim 33 wherein the sensor arrangement is arranged to monitor electric parameters associated with forward power coupled from output terminals of the first match network to the electrode and reflected power coupled from the electrode to the output terminals of the first match network.

35. The apparatus of claim 34 wherein the first source and the plasma are arranged to establish a dc bias on the workpiece and the first source is connected for controlling the energy level of ionized particles in the plasma incident on the workpiece, and the sensor and controller arrangements are arranged for controlling the first source in response to the dc bias to control the energy level of ionized particles of the plasma incident on the workpiece.

36. The apparatus of claim 27 wherein the sensor arrangement is arranged to monitor electric parameters associated with forward power coupled from output terminals of the first match network to the electrode and reflected power coupled from the electrode to the output terminals of the first match network.

37. The apparatus of claim 27 wherein the first source and the plasma are arranged to establish a dc bias on the workpiece and the first source is connected to control the energy level of ionized particles in the plasma incident on the workpiece, and the sensor and controller arrangements being connected to control the first source in response to the dc bias to control the energy level of ionized particles of the plasma incident on the workpiece.

41. The method of claim 30 wherein the electric parameters of the first and second sources are both power.

42. The method of claim 41 further including sensing an electric parameter of the load on the second ac source and controlling an electric parameter of the second ac source in response to the sensed electric parameter of the load on the second ac source.

38. A method of processing a workpiece with an ac plasma in a plasma processing chamber having (a) a workpiece holder including an electrode and (b) a reactance coupled to gas in the gas, comprising applying ac from a first source to the workpiece via a first match network and the electrode so the plasma is included in a load for the first source, exciting gas in the chamber into a plasma by applying ac from a second source to the reactance via a second match network, sensing at least one electric parameter of the load, controlling an electric parameter the first source applies to the load via the first match network in response to one of the at least one sensed electric parameter of the load, and controlling an electric parameter the second source applies to the load via the second match network in response to one of the at least one sensed electric parameter of the load.

39. The method of claim 38 wherein the sensing step includes sensing an electric parameter of the load as seen by looking from output terminals of the first match network toward the electrode and controlling an electric parameter of the first ac source in response to the sensed electric parameter of the load as seen by looking from output terminals of the first match network toward the electrode.

40. The method of claim 39 wherein the electric parameter of the first ac source is output power of the rf source.

43. The method of claim 38 further including independently controlling the electric parameter of the first ac source and the electric parameter of the second ac source so the electric parameters of the first and second sources are respectively controlled in response to the sensed electric parameter of the load on the first ac source and the sensed electric parameter of the load on the second ac source.

44. The method of claim 43 wherein the sensing step includes controlling the first source in response to electric parameters associated with forward power coupled from output terminals of the first match network to the electrode and reflected power coupled from the electrode to the output terminals of the first match network.

45. The method of claim 44 wherein the first source and the plasma establish a dc bias on the workpiece and the first source controls the energy level of ionized particles in the plasma incident on the workpiece, and controlling the first source in response to the dc bias to control the energy level of ionized particles of the plasma incident on the workpiece.

46. The method of claim 38 wherein the sensing step includes controlling the first source in response to electric parameters associated with forward power coupled from output terminals of the first match network to the electrode and reflected power coupled from the electrode to the output terminals of the first match network.

47. The method of claim 38 wherein the first source and the plasma establish a dc bias on the workpiece and the first source controls the energy level of ionized particles in the plasma incident on the workpiece, and controlling the first source in response to the dc bias to control the energy level of ionized particles of the plasma incident on the workpiece.

48. The method of claim 38 further including controlling ac applied by a second ac source to the load via a reactance in response to a sensed parameter associated with the plasma load coupled to the reactance.

49. A method of processing a workpiece with an ac plasma in a plasma processing chamber having (a) a workpiece holder including an electrode and (b) a reactance coupled to gas in the gas, comprising applying ac from a first source to the workpiece via a first match network and the electrode so the plasma is included in a load for the first source, exciting gas in the chamber into a plasma by applying ac from a second source to the reactance via a second match network, sensing an ac electric parameter in a line between the first ac source and the electrode, and controlling an electric parameter the first source applies to the load via the first match network and the electrode in response to the sensed ac electric parameter.

50. The method of claim 49 wherein the ac sources are at radio frequency and the sensed ac electric parameter is rf voltage applied to the chuck by the first ac source.

51. The method of claim 49 wherein the sensed ac electric parameter is ac voltage applied to the chuck by the first ac source.

52. Apparatus for controlling an ac plasma for treating a workpiece in a plasma processing chamber including a workpiece holder having an electrode comprising a first ac source, a first match network connected between the first ac source and the electrode;

the first ac source, first match network and the electrode being constructed and arranged to cause ac to be coupled between the plasma and the workpiece via the electrode to cause application of a bias voltage to the workpiece, the plasma being included in a load for the first ac source;

a reactance coupled with the plasma processing chamber for exciting gas in the chamber into a plasma;

a second ac source;

a second match network connected between the reactance and the second ac source to cause the plasma to be a load for the second ac source;

a sensor arrangement for an ac electric parameter, the sensor arrangement being coupled to a line between the first ac source and the electrode so as to be responsive to an ac parameter in the line; and

a controller arrangement responsive to the sensor arrangement for controlling ac the first ac source applies to the load via the electrode.

53. The apparatus of claim 52 wherein the ac sources are at radio frequency and the sensed ac electric parameter is rf voltage applied to the chuck by the first ac source.

54. The apparatus of claim 52 wherein the sensed ac electric parameter is ac voltage applied to the chuck by the first ac source.