Method for depositing atomized materials onto a substrate utilizing light exposure for heating
First Claim
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1. A process for depositing a photoresist material on a semiconductor wafer comprising the steps of:
- atomizing a solution into liquid droplets, said solution containing a photoresist material;
exposing said liquid droplets to light energy such that the droplets are heated to a temperature sufficient for liquids contained in said droplets to evaporate;
directing said heated liquid droplets onto a preheated semiconductor wafer in a thermal processing chamber such that said photoresist material forms a solid coating on said semiconductor wafer, said semiconductor wafer being preheated to a temperature of at least 50°
C.; and
engraving a predetermined pattern into said solid coating made from said photoresist material, said pattern being designed to facilitate the formation of an integrated circuit.
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Abstract
The present invention is generally directed to a process and a system for forming photoresist coatings on a semiconductor wafer. In particular, according to the present invention, a solution containing a photoresist material is atomized in a reaction vessel and directed towards a semiconductor wafer. The semiconductor wafer can be preheated. The atomized liquid is heated, such as by being exposed to light energy which causes the photoresist material to form a coating on the substrate.
93 Citations
29 Claims
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1. A process for depositing a photoresist material on a semiconductor wafer comprising the steps of:
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atomizing a solution into liquid droplets, said solution containing a photoresist material;
exposing said liquid droplets to light energy such that the droplets are heated to a temperature sufficient for liquids contained in said droplets to evaporate;
directing said heated liquid droplets onto a preheated semiconductor wafer in a thermal processing chamber such that said photoresist material forms a solid coating on said semiconductor wafer, said semiconductor wafer being preheated to a temperature of at least 50°
C.; and
engraving a predetermined pattern into said solid coating made from said photoresist material, said pattern being designed to facilitate the formation of an integrated circuit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A process for depositing a photoresist material onto a semiconductor wafer comprising the steps of:
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atomizing a solution into liquid droplets, said solution containing a photoresist material;
exposing said droplets to light energy within said thermal processing chamber, said light energy heating said droplets an amount sufficient for liquids contained in said droplets within said solution to evaporate; and
directing said liquid droplets exposed to said light energy onto a semiconductor wafer in a thermal processing chamber such that said photoresist material forms a solid coating on said semiconductor wafer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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21. A process for depositing a photoresist material onto a semiconductor wafer comprising the steps of:
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atomizing a solution into liquid droplets, said solution containing a photoresist material, said droplets having a diameter of from about 10 microns to about 100 microns;
exposing said liquid droplets to light energy, said light energy heating said liquid droplets an amount sufficient for liquids contained in said droplets to evaporate, said light energy comprising thermal light energy;
directing said liquid droplets exposed to said light energy onto a preheated semiconductor wafer in a thermal processing chamber such that said photoresist material forms a solid coating on said semiconductor wafer, said semiconductor wafer being preheated to a temperature of at least 50°
C.; and
moving said semiconductor wafer during formation of said coating in a manner that promotes coating thickness uniformity. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29)
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Specification