Method of fabricating ridge waveguide semiconductor light-emitting device

• US 6,174,747 B1
• Filed: 03/30/1999
• Issued: 01/16/2001
• Est. Priority Date: 12/23/1998
• Status: Expired due to Term

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Chen, Tse-Jun, Cheng, Chenn-Shiung, Ho, Jin-Kuo, Chiu, Chienchia
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Wille, Douglas A.
• Application Number:
  US09/281,009
• Time in Patent Office: 658 Days
• Field of Search: 257/99, 257/94, 257/103, 438/31, 438/39, 438/46, 438/47
• US Class Current: 438/31
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01S 5/0421 characterised by the semiconducting contacting layers electrodes H01S5/0425
• CPC Class Codes: H01S 5/04252 characterised by the material
• CPC Class Codes: H01S 5/2081 using special etching techniques
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/2231 with inner confining structure only between the active layer and the upper electrode

Abstract

A method of fabricating a ridge waveguide semiconductor light-emitting device is provided in which an oxide semiconductor having a heavy carrier concentration serves as the interface of the metal layer and the epitaxial layer to make the current flow through the ridge waveguide. This invention forms an oxide semiconductor having a heavy carrier concentration thereon after finishing the basic structure of a ridge waveguide semiconductor light-emitting device, then forms a metal layer to conduct current. Since the carrier concentration at the surface of the ridge waveguide is higher than that at the inner portion, the current primarily flows through the interface of the oxide semiconductor having a heavy carrier concentration and the vertex of the ridge waveguide. Thus the current is restricted to only flow through the vertex of the ridge waveguide.

Claims

1. A method of fabricating a ridge waveguide semiconductor light-emitting device comprising the steps of:

(i) sequentially forming a first conductivity type cladding layer over a substrate, a first undoped confinement layer over the first conductivity type cladding layer, an active layer over the first undoped confinement layer, a second undoped confinement layer over the active layer, a second conductivity type cladding layer over the second undoped confinement layer, a second conductivity type barrier reduction layer over the second conductivity type cladding layer, and a second conductivity type cap layer over the second conductivity type barrier reduction layer;

(ii) partially etching the second conductivity type cap layer, the second conductivity type barrier reduction layer and the second conductivity type cladding layer to a position near the second confinement layer to form a ridge waveguide;

(iii) forming a photoresist layer to mask the ridge waveguide;

(iv) removing the second conductivity type cap layer which is not covered by the photoresist layer, and then removing the photoresist layer; and

(v) forming a metal oxide and a metal layer thereon.

2. A method as claimed in claim 1 wherein the carrier concentration at the surface of the ridge waveguide is higher than that at the inner portion.

3. A method as claimed in claim 1 wherein the first conductivity type is n-type and the second conductivity type is p-type.

4. A method as claimed in claim 1 wherein the first conductivity type is p-type and the second conductivity type is n-type.

5. A method as claimed in claim 3 wherein the semiconductor having a heavy carrier concentration is an oxide semiconductor.

6. A method as claimed in claim 4 wherein the semiconductor having a heavy carrier concentration is an oxide semiconductor.

7. A method as claimed in claims 5 or 6 wherein the oxide semiconductor having a heavy carrier concentration is a single oxide layer.

8. A method as claimed in claims 5 or 6 wherein the oxide semiconductor having a heavy carrier concentration includes a plurality of oxide layers.

9. A method as claimed in claims 5 or 6 wherein the oxide semiconductor having a heavy carrier concentration is a mixed oxide semiconductor.

10. A method as claimed in claims 5 or 6 wherein a nonoxide semiconductor is inserted between the oxide semiconductor having a heavy carrier concentration and the metal, the nonoxide semiconductor having a conductivity type the same as the oxide semiconductor having a heavy carrier concentration.

11. A method as claimed in claim 5 wherein the oxide semiconductor is one of ZnO, SnO₂, In₂O₃, Tl₂O₃, CdO, TiO₂, PbO, PbO₂ or a mixture or a solid solution thereof.

12. A method as claimed in claim 11 wherein an impurity is doped to the oxide semiconductor to increase the concentration of electrons.

13. A method as claimed in claim 6 wherein the oxide semiconductor is one of NiO, CoO, MnO, FeO, Fe₂O₃, CrO, Cr₂O₃, CrO₂, PdO, CuO, CU₂O, SnO, Ag₂O, a mixture or a solid solution thereof, and CuAlO₂ and SrCu₂O₂.

14. A method as claimed in claim 13 wherein an impurity is doped to the oxide semiconductor to increase the concentration of holes.

15. A method as claimed in claim 5 wherein the oxide semiconductor is indium-tin oxide.

16. A method as claimed in claim 5 wherein the oxide semiconductor is ZnO doped with at least one of Ga, In, Al and Ce.

17. A method as claimed in claim 1 wherein the ridge waveguide semiconductor light-emitting device is a laser diode or a light-emitting diode.

18. A method as claimed in claim 1 wherein at least one ridge waveguide can be formed in step (ii).

19. A method as claimed in claim 1 wherein the metal includes at least one metal layer or alloy layer.

20. A method as claimed in claim 10 wherein the nonoxide semiconductor can be one of Si, Ge, GaAs, InP, GaP, ZnS, CdTe, PbS and ZnSe.