Method for forming metal layer using atomic layer deposition

• US 6,174,809 B1
• Filed: 12/15/1998
• Issued: 01/16/2001
• Est. Priority Date: 12/31/1997
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kang, Sang-bom, Lee, Sang-in, Chae, Yun-sook, Park, Chang-soo
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Dang, Phuc T.
• Application Number:
  US09/212,090
• Time in Patent Office: 763 Days
• Field of Search: 295/71, 295/78, 148/518, 148/362, 148/643, 437/41, 437/247, 437/949, 438/682, 438/290, 438/174, 438/180, 438/20, 438/421, 438/688, 438/721
• US Class Current: 438/682
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: H01L 21/28518 the conductive layers comprising silicides H01L21/28537 takes precedence
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76846 Layer combinations

Abstract

A method for forming a metal layer using an atomic layer deposition process. A sacrificial metal atomic layer is formed on a semiconductor substrate by reacting a precursor containing a metal with a reducing gas, and a metal atomic layer is formed of metal atoms separated from a metal halide gas on a semiconductor substrate by reacting the sacrificial metal atomic layer with a metal halide gas. Also, a silicon atomic layer may be additionally formed on the metal atomic layer using a silicon source gas, to thereby alternately stack metal atomic layers and silicon layers. Thus, a metal layer or a metal silicide layer having excellent step coverage can be formed on the semiconductor substrate.

Claims

1. A method for forming a metal layer, comprising the steps of:

(a) forming a sacrificial metal atomic layer on a semiconductor substrate;

(b) removing the sacrificial metal atomic layer and simultaneously forming a metal atomic layer on the semiconductor substrate by reacting the sacrificial metal atomic layer with a metal halide gas; and

(c) stacking a plurality of metal atomic layers on the semiconductor substrate by alternately forming the sacrificial atomic layer and the metal atomic layer, at least once.

2. The method of claim 1, further comprising the step of forming an initial sacrificial metal layer on the semiconductor substrate before step (a) of forming the sacrificial metal atomic layer.

3. The method of claim 2, wherein while the initial sacrificial metal layer is formed, the semiconductor substrate is heated to 300˜

500°

C.

4. The method of claim 1, wherein while the sacrificial metal atomic layer and the metal atomic layer are formed, the semiconductor substrate is heated to 300˜

500°

C.

5. The method of claim 1, wherein the Gibbs free energy of a composition including a metal atom of the sacrificial metal atomic layer and a halogen atom of the metal halide gas is higher than that of the metal halide.

6. The method of claim 2, further comprising the step of purging the peripheral portion of the resultant structure where the initial sacrificial metal layer is formed, with an inert gas, before step (a) of forming the sacrificial metal atomic layer.

7. The method of claim 1, further comprising the step of purging the peripheral portion of the resultant structure where the sacrificial metal atomic layer is formed, with an inert gas, before step (b) of forming the metal atomic layer.

8. The method of claim 1, further comprising the step of forming an ohmic layer at the interface between the semiconductor substrate and the plurality of metal atomic layers, by reacting the plurality of metal atomic layers with the semiconductor substrate by annealing, after step (c) of stacking the plurality of metal atomic layers.

9. The method of claim 8, wherein the ohmic layer is a metal silicide layer.

10. The method of claim 2, further comprising the step of H₂-remote-plasma processing the resultant structure where the initial sacrificial metal layer is formed, to remove remnants separated from a sacrificial metal source, after the step of forming the initial sacrificial metal layer.

11. The method of claim 1, further comprising the step of H₂-remote-plasma processing the resultant structure where the sacrificial metal atomic layer is formed, to remove remnants separated from the sacrificial metal source, after the step of forming the sacrificial metal layer.

12. The method of claim 1, further comprising the step of H₂-remote-plasma processing the resultant structure where the metal atomic layer is formed, to remove remnants separated from the metal halide gas, after the step of forming the metal atomic layer.

13. The method of claim 12, further comprising the step of purging the peripheral portion of the resultant structure where the metal atomic layer is formed with an inert gas, after the step of H₂-remote-plasma processing.

14. A method for forming a metal silicide layer, comprising the steps of:

forming a sacrificial metal atomic layer on a semiconductor substrate;

removing the sacrificial metal atomic layer and simultaneously forming a metal atomic layer on the semiconductor substrate by reacting the sacrificial metal atomic layer with a metal halide gas;

forming a silicon atomic layer on the metal atomic layer; and

alternately stacking a plurality of metal atomic layers and a plurality of silicon atomic layers on the semiconductor substrate by forming the sacrificial metal atomic layer, the metal atomic layer and the silicon atomic layer in sequence at least once.

15. The method of claim 14, further comprising the step of forming an initial sacrificial metal layer on the semiconductor substrate before the step of forming the sacrificial metal atomic layer.

16. The method of claim 15, wherein while the initial sacrificial metal layer is formed, the semiconductor substrate is heated to 300˜

500°

C.

17. The method of claim 14, wherein while the sacrificial metal atomic layer, the metal atomic layer and the silicon atomic layer are formed, the semiconductor substrate is heated to 300˜

500°

C.

18. The method of claim 14, wherein the Gibbs free energy of a composition consisting of a metal atom of the sacrificial metal atomic layer and a halogen atom of the metal halide gas is higher than that of the metal halide.

19. The method of claim 15, further comprising the step of purging the peripheral portion of the resultant structure where the initial sacrificial metal layer is formed, with an inert gas, before the step of forming the sacrificial metal atomic layer.

20. The method of claim 14, further comprising the step of purging the peripheral portion of the resultant structure where the sacrificial metal atomic layer is formed, with an inert gas, before the step of forming the metal atomic layer.

21. The method of claim 14, further comprising the step of purging the peripheral portion of the resultant structure where the metal atomic layer is formed, with an inert gas, before the step of forming the silicon atomic layer.

22. The method of claim 15, further comprising the step of H₂-remote-plasma processing the resultant structure where the initial sacrificial metal layer is formed, to remove remnants separated from a sacrificial metal source, after the step of forming the initial sacrificial metal layer.

23. The method of claim 14, further comprising the step of H₂-remote-plasma processing the resultant structure where the sacrificial metal atomic layer is formed, to remove remnants separated from the sacrificial metal source, after the step of forming the sacrificial metal layer.

24. The method of claim 14, further comprising the step of H₂-remote-plasma processing the resultant structure where the metal atomic layer is formed, to remove remnants separated from the metal halide gas, after the step of forming the metal atomic layer.

25. The method of claim 14, wherein the silicon atomic layer is formed by reacting a silicon source gas.