Copper interconnect structure and method of formation

• US 6,174,810 B1
• Filed: 04/06/1998
• Issued: 01/16/2001
• Est. Priority Date: 04/06/1998
• Status: Expired due to Term

• Current Assignee: Apple Inc.
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Lucas, Kevin, Islam, Rabiul, Gelatos, Avgerinos V., Venkatraman, Ramnath, Filipiak, Stanley M.
• Primary Examiner(s): Whitehead, Jr., Carl
• Assistant Examiner(s): GUERRERO, MARIA F
• Application Number:
  US09/055,510
• Time in Patent Office: 1,016 Days
• Field of Search: 438/626, 438/687, 438/634, 438/622, 438/624, 438/786, 438/636, 438/72
• US Class Current: 438/687
• CPC Class Codes: H01L 21/76801 characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
• CPC Class Codes: H01L 21/76808 involving intermediate temporary filling with material
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213

Abstract

In one embodiment, a copper interconnect structure is formed by depositing a dielectric layer (28) on a semiconductor substrate (10). The dielectric layer (28) is then patterned to form interconnect openings (29). A layer of copper (34) is then formed within the interconnect openings (29). A portion of the copper layer (34) is then removed to form copper interconnects (39) within the interconnect openings (29). A copper barrier layer (40) is then formed overlying the copper interconnects (39). Adhesion between the copper barrier layer (40) and the copper interconnects (39) is improved by exposing the exposed surface of the copper interconnects (39) to a plasma generated using only ammonia as a source gas.

Claims

1. A method for forming a copper interconnect structure within a semiconductor device comprising the steps of:

providing a semiconductor substrate;

forming a first dielectric layer overlying the semiconductor substrate;

patterning the first dielectric layer to form a first opening and a second opening within the first dielectric layer;

forming a copper layer, the copper layer lying within the first opening and the second opening;

removing a portion of the copper layer to form a first copper interconnect within the first opening and a second copper interconnect within the second opening;

exposing a portion of the first copper interconnect and a portion of the second copper interconnect to a plasma consisting essentially of hydrogen and nitrogen;

forming a first silicon oxynitride layer overlying the first copper interconnect and the second copper interconnect after the step of exposing the first copper interconnect and the second copper interconnect to the plasma, the first silicon oxynitride layer having a first absorptive coefficient;

forming a second silicon oxynitride layer abutting the first silicon oxynitride layer, the second silicon oxynitride layer having a second absorptive coefficient;

forming a second dielectric layer overlying the second silicon oxynitride layer;

forming a photoresist mask overlying the second dielectric layer, wherein the photoresist mask is formed using electromagnetic radiation, the electromagnetic radiation having an exposure wavelength, wherein the first absorptive coefficient is less than the second absorptive coefficient at the exposure wavelength; and

using the photoresist mask to pattern the second dielectric layer.

2. The method of claim 1, wherein the second silicon oxynitride layer is further characterized as having a thickness ranging from 5 to 100 nanometers.

3. The method of claim 1, wherein the first silicon oxynitride layer is further characterized as having a first silicon concentration, and the second silicon oxynitride layer is further characterized as having a second silicon concentration, wherein the first silicon concentration is less than the second silicon concentration.

4. The method of claim 1, wherein the first silicon oxynitride layer is further characterized as having an absorptive coefficient ranging from approximately 0.0 to approximately 0.15 at the exposure wavelength.

5. The method of claim 4, wherein the second silicon oxynitride layer is further characterized as having an absorptive coefficient ranging from approximately 0.2 to approximately 1.0 at the exposure wavelength.

6. The method of claim 5, wherein the exposure wavelength is approximately 365 nanometers.

7. The method of claim 5, wherein the exposure wavelength is approximately 248 nanometers.

8. A method for forming a semiconductor device comprising the steps of:

providing a semiconductor substrate;

forming a first copper interconnect and a second copper interconnect overlying the semiconductor substrate;

exposing a portion of the first copper interconnect and a portion of the second copper interconnect to a plasma consisting essentially of hydrogen and nitrogen;

forming a silicon nitride layer overlying the first copper interconnect and the second copper interconnect after the step of exposing the first copper interconnect and the second copper interconnect to the plasma, the silicon nitride layer having a first absorptive coefficient;

forming a silicon oxynitride layer abutting the silicon nitride layer, the silicon oxynitride layer having a second absorptive coefficient;

forming a dielectric layer overlying the silicon oxynitride layer;

forming a photoresist mask overlying the dielectric layer, wherein the photoresist mask is formed using electromagnetic radiation, the electromagnetic radiation having an exposure wavelength wherein the first absorptive coefficient is less than the second absorptive coefficient at the exposure wavelength; and

using the photoresist mask to pattern the dielectric layer.

9. The method of claim 8, wherein the silicon oxynitride layer is further characterized as having a thickness ranging from 5 to 100 nanometers.

10. The method of claim 8, wherein the silicon nitride layer is further characterized as having an absorptive coefficient ranging from approximately 0.0 to approximately 0.15 at the exposure wavelength.

11. The method of claim 10, wherein the silicon oxynitride layer is further characterized as having an absorptive coefficient ranging from approximately 0.2 to approximately 1.0 at the exposure wavelength.

12. The method of claim 11, wherein the exposure wavelength is approximately 365 nanometers.

13. The method of claim 11, wherein the exposure wavelength is approximately 248 nanometers.