Method and apparatus for detecting defects in the manufacture of an electronic device

• US 6,175,417 B1
• Filed: 03/22/2000
• Issued: 01/16/2001
• Est. Priority Date: 02/13/1998
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Taylor, Ted, Do, Douglas
• Primary Examiner(s): Font, Frank G.
• Assistant Examiner(s): Ratliff, Reginald A.
• Application Number:
  US09/532,869
• Time in Patent Office: 300 Days
• Field of Search: 356/388, 356/392, 356/393, 356/394, 356/395
• US Class Current: 356/392
• CPC Class Codes: G01N 21/95684 Patterns showing highly reflecting parts, e.g. metallic elements
• CPC Class Codes: Y10S 977/773 Nanoparticle, i.e. structure having three dimensions of 100 nm or less

Abstract

The invention provides a unique method and apparatus for detecting defects in an electronic device. In one preferred embodiment, the electronic device is a semiconductor integrated circuit (IC), particularly one of a plurality of IC dies fabricated on a wafer of silicon or other semiconductor material. The defect detection operation is effectuated by a unique combination of critical dimension measurement and pattern defect inspection techniques. During the initial scan of the surface of the wafer, in an attempt to locate the appropriate area for a critical dimension (CD) feature or element that is to be measured, a “best fit” comparison is made between a reference image and scanned images. The critical dimension measurements are conducted on a “best fit” image. In addition, a “worst fit” comparison is made between the reference and scanned images. A “worst fit” determination represents pattern distortions or defects in the ICs under evaluation.

Claims

1. A dimension measurement station for measuring dimensions of an integrated circuit (IC), the measurement station comprising:

a chuck for supporting an IC during measurement;

an image detector, operatively coupled to said chuck, which operates to detect an image of the IC, and to output a detection signal representative of the image detected;

an image memory, operatively coupled to said image detector, which stores the image detected by said image detector;

a processor, operatively coupled to said image memory, which compares the detected image in said image memory to a predetermined image, and accumulates similarities between each detected image and the predetermined image, wherein said processor generates a measurement signal for a detected image which has a maximum number of similarities, and generates an inspection signal for a detected image which has a minimum number of similarities;

a metrological device, operatively coupled to said processor, responsive to the measurement signal generated by said processor to take measurements of a detected image of the IC having said maximum number of similarities;

a pattern matching device, operatively coupled to said processor, responsive to the inspection signal generated by said processor to identify a detected image having said minimum number of similarities as representing a pattern defect in said IC.

2. The dimension measurement station as recited in claim 1, further comprising:

a scanning electron-beam microscope (SEM) focused on a portion of the IC; and

wherein said processor further comprises a chuck controller for controlling movement of said chuck in at least two dimensions so as to permit said SEM to individually focus on respective ones of a plurality of circuit elements on the IC, wherein said processor outputs a measurement signal when said SEM is focused on one of the plurality of circuit elements on the IC which produces a detected image with a maximum number of similarities relative to the predetermined image.

3. The dimension measurement station as recited in claim 1, wherein the IC is one of a plurality of fabricated devices in an array on a semiconductor wafer, and wherein the predetermined image corresponds to an adjacent one of the plurality of fabricated devices on the semiconductor wafer.