Baffle plate of dry etching apparatus for manufacturing semiconductor devices

• US 6,176,969 B1
• Filed: 04/22/1999
• Issued: 01/23/2001
• Est. Priority Date: 04/22/1998
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Choi, Jong-wook, Park, Jeong-hyuck
• Primary Examiner(s): DANG, THI D
• Application Number:
  US09/296,532
• Time in Patent Office: 642 Days
• Field of Search: 156/345, 118/723.R, 118/723.E, 118/723.ER
• US Class Current: 156/345.29
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32834 Exhausting
• CPC Class Codes: H01L 21/31116 by dry-etching

Abstract

An annular ring shaped baffle plate disposed between a process chamber and a vacuum chamber of a dry etching apparatus. A plurality of slits are formed radially along the annular ring and extend from a top surface of the annular ring to a bottom surface of the annular ring. The slits are circumferentially spaced from each other, and each of the slits has an upper section that is tapered and a lower section that has a constant width. Alternatively, the slits may be replaced by a plurality of discharging regions formed in the annular ring, with the discharging regions having a circumferential width that is greater than a radial length.

Claims

1. A baffle plate disposed between a process chamber and a vacuum chamber of a dry etching apparatus for manufacturing semiconductor devices, the baffle plate comprising:

an annular ring have an inner circumferential edge and an outer circumferential edge; and

a plurality of slits formed radially along the annular ring and extending from a top surface of the annular ring to a bottom surface of the annular ring, the slits being circumferentially spaced from each other,

each of the slits having an upper section extending at a positive slope from the top surface of the annular ring to a particular depth within the annular ring such that the upper section is tapered, and a lower section extending vertically from the particular depth to the bottom surface of the annular ring,

wherein a circumferential width of the upper section at the top surface of the annular ring is greater than a circumferential width at the particular depth,

and wherein the circumferential width at the particular depth is equal to the circumferential width at the bottom surface of the annular ring, such that the lower section has a constant width.

2. The baffle plate as claimed in the claim 1, wherein the plurality of the slits is more than 45.

3. The baffle plate as claimed in the claim 2, wherein the plurality of the slits is 180.

4. The baffle plate as claimed in the claim 3, wherein a diameter of the baffle plate ranges between 365 to 366 mm, the circumferential width of the upper section at the top surface of the annular ring ranges between 1.6 to 2.0 mm, and the circumferential width of the lower section ranges between 1.0 to 1.2 mm.

5. The baffle plate as claimed in the claim 1, wherein the ratio of a vertical height of the tapered upper section of the slit and a vertical height of the lower section of the slit ranges between 1:

1 to 5;

1.

6. The baffle plate as claimed in the claim 1, wherein the tapered upper section forms surfaces that are inclined at an angle between 75°

to 85°

.

7. The baffle plate as claimed in the claim 1, wherein the tapered upper section forms surfaces that are inclined at an angle of 78°

.

8. The baffle plate as claimed in the claim 1, wherein the baffle plate is made of aluminum, and surfaces of the baffle plate are anodized.

9. A baffle plate disposed between a process chamber and a vacuum chamber of a dry etching apparatus for manufacturing semiconductor devices, the baffle plate comprising:

an annular ring have an inner circumferential edge and an outer circumferential edge; and

a plurality of discharging regions, formed circumferentially along the annular ring, having a circular arc shape with a radial length and extending from a top surface of the annular ring to a bottom surface of the annular ring, the discharging regions being circumferentially spaced from each other,

each discharging region having the same area, with a combined area of the plurality of discharging regions being more than 50% of the area of the annular ring.

10. The baffle plate as claimed in the claim 9, wherein a circumferential width of the discharging regions is greater than the radial length.

11. The baffle plate as claimed in the claim 9, wherein a circumferential width of the discharging region at the top surface of the annular ring is greater than a circumferential width at the bottom surface of the annular ring, such that the discharging region is tapered.

12. The baffle plate as claimed in the claim 9, wherein the radial length of the discharging region at the top surface of the annular ring is greater than the radial length at the bottom surface of the annular ring, such that the discharging region is tapered.

13. The baffle plate as claimed in the claim 9, wherein the plurality of discharging regions is 4.

14. The baffle plate as claimed in the claim 9, wherein the plurality of discharging regions is 8.

15. The baffle plate as claimed in the claim 9, wherein the plurality of discharging regions is 16.

16. The baffle plate as claimed in the claim 9, wherein the baffle plate is made of aluminum, and surfaces of the baffle plate are anodized.

17. A baffle plate disposed between a process chamber and a vacuum chamber of a dry etching apparatus for manufacturing semiconductor devices, the baffle plate comprising:

an annular ring have an inner circumferential edge and an outer circumferential edge; and

a plurality of slits formed radially along the annular ring and extending from a top surface of the annular ring to a bottom surface of the annular ring, the slits being circumferentially spaced from each other,

each of the slits having a vertical surface extending vertically from the top surface to the bottom surface of the annular ring, wherein an area of an upper section of the slit is equal to an area of a lower section of the slit.