Optically black surface for producing the same

• US 6,177,673 B1
• Filed: 12/10/1998
• Issued: 01/23/2001
• Est. Priority Date: 12/10/1997
• Status: Expired due to Term

• Current Assignee: Vaisala Oyj, Valtion Teknillinen Tutkimuskeskus
• Original Assignee: Vaisala Oyj, Valtion Teknillinen Tutkimuskeskus
• Inventors: Lehto, Ari, Torkkeli, Altti Kaleva, Blomberg, Martti Juhani
• Primary Examiner(s): Ham, Seungsook
• Assistant Examiner(s): HANIG, RICHARD E
• Application Number:
  US09/208,592
• Time in Patent Office: 775 Days
• Field of Search: 250/339.01, 250/370.08, 250/338.1, 250/330, 250/338.4, 257/458, 257/466, 257/435, 359/359, 359/360, 359/589
• US Class Current: 250/339.01
• CPC Class Codes: G02B 5/22 Absorbing filters G02B5/201 - G02B5/208 take precedence

Abstract

The invention relates to a structure suitable for manufacturing by the fabrication techniques of micro-electronics so as to include an optically black surface that functions as an absorber or emitter, respectively, over a predetermined wavelength range, the structure includes a electrically nonconducting support layer (1), a metallic mirror layer (2) made on the support layer (1), and a lossy layer (4) made on the support layer (1) and the metallic mirror layer (2) superimposed thereon. According to the invention, the mirror layer (2) is made on the upper surface of the support layer (1) and the lossy layer (4) is made from a doped semiconductor material. The thickness of the multilayer structure (3, 4, 7) and the doping of the lossy layer (4) are predetermined relative to each other so that the mirror layer (2) will be optically matched over the predetermined wavelength range of absorption or emission, respectively, to the medium surrounding the structure. The invention also concerns a method for manufacturing the surfaces.

Claims

1. A structure manufactured using the fabrication techniques of micro-electronics so as to include an optically black surface adapted to function as an absorber or emitter, respectively, over a predetermined wavelength range, said structure comprising

an electrically nonconducting support layer (1),

a metallic mirror layer (2) made on said support layer (1), and

a lossy layer (4) made on the support layer (1) and the metallic mirror layer (2) superimposed thereon,

characterized in that

the metallic mirror layer (2) is made on the upper surface of said support layer (1),

the lossy layer (4) is made from a doped semiconductor material, and

the thickness and doping of the lossy layer (4) are predetermined relative to each other so that the structure formed by the metallic mirror layer (2) with overlying layer structure comprised of said lossy layer will be optically matched over the predetermined wavelength range of absorption or emission, respectively, to a medium surrounding the structure.

2. A structure according to claim 1, characterized in that said lossy layer (4) comprises

a layer of said semiconductor material, and

a dopant dose applied into said semiconductor material so as to set the absorption/emission wavelength range of said optically black surface to its desired predetermined values.

3. A structure according to claim 1, characterized in that the semiconductor material of said lossy layer (4) is polycrystalline silicon or germanium.

4. A structure according to claim 1, characterized in that the mirror metal is molybdenumum, tantalum or tungsten.

5. A structure according to claim 1, characterized in that

above said metallic mirror layer (2), and positioned between said metallic mirror layer (2) and said lossy layer (4), a first thin protective layer (3) is provided, and

on the upper surface of said lossy layer (4), there is provided a second thin protective layer (7).

6. A structure according to claim 5, characterized in that the material of said first and said second thin protective layer (3, 7) and said support layer (1) is silicon dioxide, silicon nitride or a composite of silicon dioxide and silicon nitride.