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High temperature, conductive thin film diffusion barrier for ceramic/metal systems

  • US 6,178,082 B1
  • Filed: 02/26/1998
  • Issued: 01/23/2001
  • Est. Priority Date: 02/26/1998
  • Status: Expired due to Fees
First Claim
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1. An interposer capacitor comprising:

  • a multilayer ceramic substrate comprising a plurality of ceramic layers having therein metallized circuitry, interconnecting metallized vias and bottom to top vias;

    a thin film structure electrically connected to the multilayer ceramic substrate, the thin film structure containing at least one capacitor comprising at least one lower first electrode comprising a layer of first conductive material and an upper second electrode comprising a layer of second conductive material with a dielectric material therebetween with each electrode layer being connected by wiring to a corresponding pad on the surface of the thin film structure; and

    a barrier layer on the lower surface of the first conductive material, the barrier layer being between the first conductive material and the vias and metallized circuitry of the multilayer ceramic substrate.

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