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Bar field effect transistor

  • US 6,180,441 B1
  • Filed: 05/10/1999
  • Issued: 01/30/2001
  • Est. Priority Date: 12/13/1996
  • Status: Expired due to Term
First Claim
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1. A method of fabricating field-effect transistors, comprising the steps of:

  • providing a semiconductor layer having a first conductivity type;

    forming a plurality of raised bars to extend above general surface of the semiconductor layer, each of the bars being elongated in a first direction and spaced apart by respective valleys in a second direction different from the first direction;

    forming gate insulators on top surfaces of each said bars, and on bottoms of the valleys and on sidewalls of the bars which extend between the top surfaces and the valleys;

    forming a conductive layer on each gate insulator layer so as to be disposed adjacent the top surfaces of the bars, and the bottoms of the valleys and the side walls;

    patterning and etching the conductive layers to define an elongated continuous conductive gate which extends across the bars and into the valleys in the second direction, said gate being common to said field-effect transistors; and

    implanting source regions and drain regions into portions of the semiconductor layer, each source and drain region being laterally adjacent to one another, with a channel region therebetween and adjacent to the bars, the side walls and bottoms of the valleys so as to be self-aligned to the conductive gate, a dopant selected for said step of implanting such that the source region and drain region are of second conductivity type opposite the first conductivity type.

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