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Method to fabricate high Q inductor by redistribution layer when flip-chip package is employed

  • US 6,180,445 B1
  • Filed: 04/24/2000
  • Issued: 01/30/2001
  • Est. Priority Date: 04/24/2000
  • Status: Active Grant
First Claim
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1. A method of creating a high-Q inductor on a surface of a semiconductor substrate whereby said substrate is in addition used for mounting of flip chip semiconductor devices, comprising the steps of:

  • providing a semiconductor substrate whereby a surface of said substrate is divided into an active region adjacent to a region of electrical isolation adjacent to a region over which one or more inductors are to be created;

    depositing a layer of insulation over a surface of said substrate;

    depositing a layer of intra-metal dielectric over the surface of said layer of insulation;

    creating a network of metal interconnects and metal points of contact in said layers of insulation including said layer of intra-metal dielectric whereby said network of metal interconnects and metal points of contact provide points of electrical contact in a surface of said layer of intra-metal dielectric whereby said points of electrical contact connect to points of electrical contact in a surface of said substrate;

    depositing a layer of low-K polyimide over a surface of said substrate;

    creating a pattern of redistribution vias in said layer of low-K polyimide;

    creating a network of conductive interconnect lines in addition to creating one or more inductors on a surface of said layer of low-K polyimide;

    depositing a layer of polyimide over a surface of said layer of low-K polyimide thereby including said network of conductive interconnect lines thereby furthermore including said one or more inductors on a surface of said layer of low-K polyimide; and

    performing backend processing thereby interconnecting said flip chips to said network of conductive interconnect lines.

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