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Method for forming vias in a low dielectric constant material

  • US 6,180,518 B1
  • Filed: 10/29/1999
  • Issued: 01/30/2001
  • Est. Priority Date: 10/29/1999
  • Status: Expired due to Term
First Claim
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1. A method for making a semiconductor device comprising the steps of:

  • forming a first conductive layer adjacent a substrate;

    forming an etch stop layer on the first conductive layer;

    forming a dielectric layer on the etch stop layer;

    forming a via through the dielectric layer to expose the etch stop layer at the bottom and producing porous sidewalls; and

    etching the exposed etch stop layer using an etchant, and while the etchant cooperates with etched material from the etch stop layer to form a polymeric layer to coat the porous sidewalls of the via.

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