Thin film transistors with organic-inorganic hybrid materials as semiconducting channels

• US 6,180,956 B1
• Filed: 03/03/1999
• Issued: 01/30/2001
• Est. Priority Date: 03/03/1999
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Dimitrakopoulos, Christos D., Kagan, Cherie R., Mitzi, David B., Kymissis, Ioannis, Chondroudis, Konstantinos
• Primary Examiner(s): CRANE, SARA W
• Application Number:
  US09/261,515
• Time in Patent Office: 699 Days
• Field of Search: 257/40, 257/76, 257/289, 257/347
• US Class Current: 257/40
• CPC Class Codes: H10K 10/464 Lateral top-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/488 the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
• CPC Class Codes: H10K 85/30 Coordination compounds
• CPC Class Codes: H10K 85/50 Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3

Abstract

An FET structure in accordance with the invention employs an organic-inorganic hybrid material as the semiconducting channel between source and drain electrodes of the device. The organic-inorganic material combines the advantages of an inorganic, crystalline solid with those of an organic material. The inorganic component forms an extended, inorganic one-, two-, or three-dimensional network to provide the high carrier mobilities characteristic of inorganic, crystalline solids. The organic component facilitates the self-assembly of these materials and enables the materials to be deposited by simple, low temperature processing conditions such as spin-coating, dip-coating, or thermal evaporation. The organic component is also used to tailor the electronic properties of the inorganic framework by defining the dimensionality of the inorganic component and the electronic coupling between inorganic units.

Claims

1. A field effect transistor comprising:

a source region and a drain region;

a channel layer extending between said source region and said drain region, said channel layer comprising a semiconducting organic-inorganic hybrid material;

a gate region disposed in spaced adjacency to said channel layer, and

an electrically insulating layer between said gate region and said source region, drain region, and channel layer.

2. A field effect transistor as set forth in claim 1, wherein said source region, channel layer and drain region are disposed upon a surface of a substrate, said electrically insulating layer is disposed over said channel layer and extending from said source region to said drain region, and said gate region is disposed over said electrically insulating layer.

3. A field effect transistor as set forth in claim 1, wherein said gate region is disposed as a gate layer upon a surface of a substrate, said electrically insulating layer is disposed upon said gate layer, and said source region, channel layer, and drain region are disposed upon said electrically insulating layer.

4. A field effect transistor as set forth in claim 1, wherein said organic-inorganic hybrid material is a material composed of:

organic components and inorganic components which are mixed together on a molecular level, and (i) wherein the material is characterized by a substantially fixed ratio of each organic component to each inorganic component;

(ii) wherein at least one component is semiconducting; and

(iii) wherein both organic and inorganic components manifest forces that enable a self assembly therebetween into a predictable arrangement.

5. A field effect transistor as set forth in claim 1, wherein said semiconducting organic-inorganic hybrid material includes an inorganic component having a perovskite crystalline structure.

6. A field effect transistor as set forth in claim 5, wherein said semiconducting organic-inorganic hybrid material includes an alkyl monoammonium cation.

7. A field effect transistor as set forth in claim 5, wherein said semiconducting organic-inorganic hybrid material is phenethylammonium tin iodide, (PEA)₂SnI₄.

8. A field effect transistor as set forth in claim 5, wherein said semiconducting organic-inorganic hybrid material includes an alkyl diammonium cation.

9. A field effect transistor as set forth in claim 8, wherein said semiconducting organic-inorganic hybrid material is BDASnI₄ (butyl diammonium tin iodide) as the semiconductor material.

10. A field effect transistor as set forth in claim 1, wherein said substrate comprises a flexible material.

11. A field effect transistor as set forth in claim 1, wherein said substrate comprises a plastic material.