Copper interconnection structure incorporating a metal seed layer
First Claim
1. An interconnection structure for providing electrical connections to an electronic device comprising:
- a body formed of copper and between about 0.001 and about 10 weight percent of at least one alloying element selected from the group consisting of C, N, Cl, O and S, and a copper alloy seed layer sandwiched in between and in intimate contact with both said body and said electronic device for improving electromigration resistance of said interconnection structure.
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Abstract
The present invention discloses an interconnection structure for providing electrical communication with an electronic device which includes a body that is formed substantially of copper and a seed layer of either a copper alloy or a metal that does not contain copper sandwiched between the copper conductor body and the electronic device for improving the electromigration resistance, the adhesion property and other surface properties of the interconnection structure. The present invention also discloses, methods for forming an interconnection structure for providing electrical connections to an electronic device by first depositing a seed layer of copper alloy or other metal that does not contain copper on an electronic device, and then forming a copper conductor body on the seed layer intimately bonding to the layer such that electromigration resistance, adhesion and other surface properties of the interconnection structure are improved.
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Citations
30 Claims
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1. An interconnection structure for providing electrical connections to an electronic device comprising:
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a body formed of copper and between about 0.001 and about 10 weight percent of at least one alloying element selected from the group consisting of C, N, Cl, O and S, and a copper alloy seed layer sandwiched in between and in intimate contact with both said body and said electronic device for improving electromigration resistance of said interconnection structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An interconnection structure for providing electrical connection to an electronic device comprising:
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a copper conductor body, and a copper alloy seed layer sandwiched in between and in intimate contact with both said copper conductor body and a diffusion barrier layer formed on said electronic device for improving adhesion to said underlying diffusion barrier layer, said copper alloy seed layer comprises copper and at least one element selected from the group consisting of Al, Mg, Be, Ca, Sr, Ba, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Pb, Dy, Ho, Er, Tm, Yb, Lu, Si and Ge. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. An interconnection system for providing electrical connection to an electronic device comprising:
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a copper conductor body, and a copper alloy seed layer sandwiched in between and in intimate contact with both said copper conductor body and said electronic device for improving the surface properties of the electronic device, said copper alloy seed layer comprises copper and at least one element selected from the group consisting of B, O, N, P, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Ag, Au, Zn and Cd. - View Dependent Claims (20, 21, 22, 23)
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24. An interconnection system for providing electrical connection to an electronic device comprises:
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a copper conductor body, and a metal seed layer sandwiched in between and in intimate contact with both said copper conductor body and said electronic device for improving the copper conductor deposition process, said metal seed layer is deposited of a metal which has a solubility in copper so low such that substantially no copper compounds can be formed, said metal seed layer having a thickness between about 0.1 nm and about 100 nm. - View Dependent Claims (25, 26, 27, 28, 29, 30)
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Specification