Antenna-integral high frequency circuit electromagnetically coupling feeder circuit connected to high frequency circuit to microstrip antenna via slot coupling hole

• US 6,181,278 B1
• Filed: 03/20/1998
• Issued: 01/30/2001
• Est. Priority Date: 03/21/1997
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Suematsu, Eiji, Kakimoto, Noriko
• Primary Examiner(s): Lee, Benny T.
• Application Number:
  US09/044,867
• Time in Patent Office: 1,047 Days
• Field of Search: 333/247, 343/700 MS, 343/853
• US Class Current: 343/700.0MS
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device
• CPC Class Codes: H01L 2224/1134 Stud bumping, i.e. using a wire-bonding apparatus
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45014 Ribbon connectors, e.g. rectangular cross-section
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48237 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/78301 Capillary
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00013 Fully indexed content
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/15159 Side view
• CPC Class Codes: H01L 2924/15313 : being a land array, e.g. LGA
• CPC Class Codes: H01L 2924/16152 : Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/16195 : Flat cap [not enclosing an internal cavity]
• CPC Class Codes: H01L 2924/16251 : Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
• CPC Class Codes: H01L 2924/206 : Length ranges
• CPC Class Codes: H01L 2924/20752 : larger or equal to 20 microns less than 30 microns
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01Q 23/00 : Antennas with active circuits or circuit elements integrated within them or attached to them
• CPC Class Codes: H01Q 9/0457 : electromagnetically coupled to the feed line

Abstract

An antenna-integral high frequency circuit includes: a first grounding conductor surrounding a microstrip antenna; a first via hole connecting the first grounding conductor and a second grounding conductor; and a second via hole connecting the second grounding conductor and a third grounding conductor such that the distance from the second grounding conductor to a fourth grounding conductor is less than a predetermined value.

Claims

1. An antenna-integral high frequency circuit comprising:

a first conductor layer provided with a microstrip antenna;

a second conductor layer including a first grounding portion provided with a first slot-coupling hole;

a third conductor layer including a feeder circuit electromagnetically coupled with said microstrip antenna via said first slot coupling hole, and a second grounding portion physically separated from the feeder circuit;

a semiconductor device including a fourth conductor layer having an input/output terminal portion connected to said feeder circuit and a third grounding portion connected to said second grounding portion so that the third grounding portion is physically separated from the terminal portion, and a high frequency circuit having said fourth conductor layer on a surface thereof;

a first dielectric substrate deposited between said first and second conductor layers;

a second dielectric substrate deposited between said second and third conductor layers; and

a first connecting portion provided to connect said first grounding portion and said second grounding portion such that a distance from said first grounding portion to said third grounding portion is less than one fourth of a wavelength associated with said high frequency circuit.

2. The antenna-integral high frequency circuit according to claim 1, wherein the first and second dielectric substrates each have a thickness of at least about 150 μ

m.

3. The antenna-integral high frequency circuit according to claim 1, further comprising:

said first conductor layer also including a fourth grounding portion surrounding said microstrip antenna; and

a second connecting portion provided to connect said first grounding portion and said fourth grounding portion, wherein the fourth grounding portion is physically separated from the microstrip antenna.

4. The antenna-integral high frequency circuit according to claim 1, further comprising:

said first conductor layer also including a fourth grounding portion surrounding said microstrip antenna, wherein the fourth grounding portion is physically separated from the microstrip antenna;

a fifth conductor layer provided between said first dielectric substrate and said second conductor layer and having a fifth grounding portion provided with a second slot coupling hole aligned with the first slot coupling hole; and

a third connecting portion provided to connect said fourth grounding portion and said fifth grounding portion.

5. The antenna-integral high frequency circuit according to claim 1, further comprising:

said first dielectric substrate having a through hole provided between said microstrip antenna and said first slot coupling hole; and

a third dielectric substrate provided in said through hole and having a dielectric constant smaller than a dielectric constant of said first dielectric substrate.

6. The antenna-integral high frequency circuit according to claim 1, wherein said first dielectric substrate has a recessed portion between said microstrip antenna and said first slot coupling hole such that the recessed portion places said first slot coupling hole closer to said microstrip antenna, further comprising a third dielectric substrate provided in said recessed portion and having a dielectric constant smaller than a dielectric constant of said first dielectric substrate.

7. The antenna-integral high frequency circuit according to claim 3, wherein:

said first dielectric substrate has a recessed portion between said microstrip antenna and said first slot coupling hole such that the recessed portion places said first slot coupling hole closer to said microstrip antenna;

said microstrip antenna is provided on a bottom surface of said recessed portion; and

said fourth grounding portion is provided at a region including a side surface of said recessed portion and surrounds said microstrip antenna.

8. The antenna-integral high frequency circuit according to claim 1, wherein a dielectric constant of said first dielectric substrate is lower than a dielectric constant of said second dielectric substrate.

9. The antenna-integral high frequency circuit according to claim 1, as a single multilayer body with at least said first dielectric substrate, said second dielectric substrate and said first grounding portion simultaneously fired.

10. The antenna-integral high frequency circuit according to claim 1, further comprising a plating conductor disposed on at least one of said third and fourth conductor layers, wherein said third and fourth conductor layers are connected via said plating conductor.

11. The antenna-integral high frequency circuit according to claim 1, further comprising a cap covering at least said semiconductor device and connected to said second grounding portion.

12. The antenna-integral high frequency circuit according to claim 1, wherein at least one of said first and second dielectric substrates is fired simultaneously with an adjacent conductor layer.

13. The antenna-integral high frequency circuit according to claim 1, wherein said high frequency circuit includes a frequency converting portion that converts a high frequency signal into an intermediate frequency signal.

14. The antenna-integral high frequency circuit according to claim 1, wherein the second dielectric substrate has a thickness of about 250 μ

m.

15. The antenna-integral high frequency circuit according to claim 1, wherein the substrates are deposited without the use of an adhesive.

16. The antenna-integral high frequency circuit according to claim 1, wherein the first dielectric substrate has a thickness of about 150 μ

m.