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Inductively coupled HDP-CVD reactor

  • US 6,182,602 B1
  • Filed: 05/29/1997
  • Issued: 02/06/2001
  • Est. Priority Date: 07/15/1996
  • Status: Expired due to Term
First Claim
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1. An apparatus for processing substrates, comprising:

  • (a) a chamber having;

    (i) a sidewall;

    (ii) a lid disposed at one end of the sidewall; and

    (iii) a bottom disposed at an opposite end of the sidewall;

    (b) a substrate support member cantilever mounted on the sidewall;

    (c) one or more gas distributors disposed through the lid to admit one or more process gases into the chamber;

    (d) one or more gas distributors disposed through the sidewall to admit one or more process gases into the chamber;

    (e) a cleaning gas inlet disposed on an interior surface of the sidewall to admit a cleaning gas into the chamber; and

    (f) an exhaust port disposed in the bottom of the chamber.

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