Hollow cathode for plasma doping system
First Claim
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1. A pulsed plasma processing system, comprising:
- an anode;
a target cathode on which a first target is to be placed, the target cathode spaced apart from the anode; and
a hollow cathode disposed adjacent to each of the anode and the target cathode, wherein the hollow cathode surrounds a portion of a space between the anode and the target cathode, and wherein the entire hollow cathode is at one potential.
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Abstract
A plasma doping apparatus includes a hollow cathode to increase throughput and uniformity of ion implantations in a target. The hollow cathode is located adjacent an anode and a target cathode on which a target is placed. An ionizable gas is provided in a space between the anode and the target cathode. The space in which the ionizable gas is provided is surrounded by the hollow cathode. The hollow cathode has either a circular or rectangular cross-section.
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Citations
12 Claims
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1. A pulsed plasma processing system, comprising:
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an anode;
a target cathode on which a first target is to be placed, the target cathode spaced apart from the anode; and
a hollow cathode disposed adjacent to each of the anode and the target cathode, wherein the hollow cathode surrounds a portion of a space between the anode and the target cathode, and wherein the entire hollow cathode is at one potential. - View Dependent Claims (2, 3, 4, 5, 6)
the anode is coupled to a reference voltage; and
the target cathode and the hollow cathode are each connected to the output of the first high voltage pulse source.
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4. The system as recited in claim 3, further comprising an ionizable gas within the space surrounded by the hollow cathode.
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5. The system as recited in claim 1, further comprising a first high voltage pulse source having a first output and a second high voltage pulse source having a second output, wherein:
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the anode is coupled to a reference voltage;
the target cathode is coupled to the second output; and
the hollow cathode is coupled to the first output.
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6. The system as recited in claim 1, further comprising a second target disposed on the hollow cathode.
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7. A pulsed plasma processing system, comprising:
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an enclosure;
an anode provided within the enclosure, the anode and enclosure coupled to a reference voltage;
a target cathode on which a first target is to be placed, the target cathode provided within the enclosure, spaced apart from the anode;
a hollow cathode disposed within the enclosure and adjacent to each of the anode and the target cathode, the hollow cathode to surround a portion of a space between the anode and the target cathode; and
a high voltage pulse source connected to the target cathode and the hollow cathode, wherein the entire hollow cathode is at one potential. - View Dependent Claims (8, 9)
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10. A pulsed plasma processing system, comprising:
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a first anode;
a second anode spaced apart from and opposite to the first anode;
a hollow cathode disposed adjacent to the first and second anodes, the hollow cathode to surround a space between the first and second anodes; and
a first high voltage pulse source to supply a positive voltage pulse, relative to a reference voltage, to each of the first and second anodes;
wherein the hollow cathode is coupled to the reference voltage. - View Dependent Claims (11, 12)
a target wafer is positioned on the hollow cathode within the space between the first and second anodes.
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Specification