Substrate material for mounting a semiconductor device, substrate for mounting a semiconductor device, semiconductor device, and method of producing the same

• US 6,183,874 B1
• Filed: 06/13/1997
• Issued: 02/06/2001
• Est. Priority Date: 06/14/1996
• Status: Expired due to Term

• Current Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Original Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Inventors: Fukui, Akira, Imamura, Makoto, Abe, Yugaku, Hirose, Yoshiyuki, Takikawa, Takatoshi, Yamagata, Shinichi, Takano, Yoshishige
• Primary Examiner(s): TURNER, ARCHENE A
• Application Number:
  US08/874,543
• Time in Patent Office: 1,334 Days
• Field of Search: 428/457, 428/469, 428/472, 428/698, 428/325, 428/323
• US Class Current: 428/472
• CPC Class Codes: C22C 32/0063 based on SiC
• CPC Class Codes: H01L 21/4807 Ceramic parts
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32188 the layer connector connecting to a bonding area protruding from the surface of the item
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/15 Ceramic or glass substrates H01L23/142, H01L23/145, H01L23/147 take precedence
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15165 : Monolayer substrate
• CPC Class Codes: H01L 2924/1517 : Multilayer substrate
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15312 : being a pin array, e.g. PGA
• CPC Class Codes: H01L 2924/1532 : the connection portion being formed on the die mounting surface of the substrate
• CPC Class Codes: H01L 2924/16152 : Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/16195 : Flat cap [not enclosing an internal cavity]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: Y10T 428/24975 : No layer or component greater than 5 mils thick
• CPC Class Codes: Y10T 428/25 : Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
• CPC Class Codes: Y10T 428/252 : Glass or ceramic [i.e., fired or glazed clay, cement, etc.] [porcelain, quartz, etc.]
• CPC Class Codes: Y10T 428/26 : Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
• CPC Class Codes: Y10T 428/31678 : Of metal

Abstract

To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m×K or higher and a thermal expansion coefficient of 20×10⁻⁶/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al—SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al—SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere.

Claims

1. A substrate material for mounting a semiconductor device, comprising:

an aluminum/silicon carbide (Al—

SiC) composite alloy comprising an Al—

SiC alloy composition having an aluminum or aluminum alloy matrix and granular silicon carbide particles dispersed therein and silicon as a component of a solid solution or as a precipitate in an amount no larger than 3% by weight, wherein said granular silicon carbide particles are dispersed in a concentration of from 10 to 70% by weight and are distributed substantially homogeneously such that fluctuations of the silicon carbide concentration within the Al—

SiC composite alloy are less than 1%.

2. The substrate material for mounting a semiconductor device, as set forth in claim 1, wherein the substrate material has a thermal conductivity of 100 W/m×

K or higher and a thermal expansion coefficient of 20×

10<sup>−

6</sup>/°

C. or lower.

3. The substrate material for mounting a semiconductor device as claimed in claim 1, wherein the silicon carbide granular particles are dispersed from 35 to 70% by weight.

4. The substrate material for mounting a semiconductor device, as set forth in claim 3, wherein the substrate material has a thermal conductivity of 180 W/m×

K or higher.

5. The substrate material for mounting a semiconductor device as set forth in claim 1, wherein said aluminum/silicon carbide composite alloy comprises:

aluminum or aluminum alloy;

silicon carbide; and

aluminum carbide formed at an interface between said aluminum or aluminum alloy and said silicon carbide.

6. The substrate material for mounting a semiconductor device as claimed in claim 5, wherein the amount of the aluminum carbide is lower than 5% by weight.

7. The substrate material for mounting a semiconductor device as claimed in claim 6, wherein the aluminum/silicon carbide composite alloy has a thermal conductivity of 180 W/m×

K or higher.

8. The substrate material for mounting a semiconductor device as claimed in claim 5, wherein aluminum carbide is distributed at the interface between the silicon carbide and the aluminum or aluminum alloy in such an amount that the ratio of the peak intensity for aluminum carbide (012) to that for aluminum (200) both determined by X-ray analysis with CuK_a line is not more than 0.025.

9. The substrate material for mounting a semiconductor device as claimed in claim 8, wherein the aluminum/silicon carbide composite alloy has a thermal conductivity of 180 W/m×

K or higher.

10. The substrate material for mounting a semiconductor device as claimed in claim 1, wherein the aluminum/silicon carbide composite alloy contains nitrogen in an amount of from 0.01 to 1% by weight.

11. The substrate material for mounting a semiconductor device as claimed in claim 1, wherein the aluminum/silicon carbide composite alloy contains oxygen in an amount of from 0.05 to 0.5% by weight.

12. The substrate material for mounting a semiconductor device as claimed in claim 1, wherein the aluminum/silicon carbide composite alloy contains β

-SiC as the silicon carbide granular particles.

13. The substrate material for mounting a semiconductor device as claimed in claim 1, wherein the silicon carbide granular particles have an average particle diameter of from 1 to 100 μ

m.

14. The substrate material for mounting a semiconductor device as claimed in claim 12, wherein the silicon carbide granular particles have an average particle diameter of from 10 to 80 μ

m.