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Method of retaining the integrity of a photoresist pattern

  • US 6,183,940 B1
  • Filed: 03/17/1998
  • Issued: 02/06/2001
  • Est. Priority Date: 03/17/1998
  • Status: Expired due to Fees
First Claim
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1. A method for retaining the integrity of a photoresist pattern comprising:

  • patterning a photosensitive material to form photoresist portions overlying a semiconductor substrate, said substrate including at least one layer of material formed thereon; and

    treating said photoresist portions with a plasma derived from a fluorocarbon to form etch resistant photoresist portions, said treating of said etch resistant photoresist portions including simultaneously etching of at least one layer disposed on said semiconductor substrate.

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