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Process for manufacturing high-sensitivity capacitive and resonant integrated sensors, particularly accelerometers and gyroscopes, and sensors made therefrom

  • US 6,184,052 B1
  • Filed: 10/26/1999
  • Issued: 02/06/2001
  • Est. Priority Date: 07/10/1997
  • Status: Expired due to Term
First Claim
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1. A process for manufacturing integrated sensors, particularly accelerometers and gyroscopes, comprising the steps of forming a temporary support region of sacrificial material over a semiconductor material body and a suspended structure including a tungsten region over said temporary support region and then removing said temporary support region, wherein said step of forming a suspended structure comprises the steps of:

  • depositing a polycrystalline silicon layer over said temporary support region;

    depositing a tungsten layer over said polycrystalline silicon layer;

    depositing a first silicon carbide layer over said tungsten layer;

    defining said suspended structure by selectively removing said silicon carbide, tungsten and polycrystalline silicon layers; and

    forming spacer elements of silicon carbide laterally with respect to uncovered ends of said tungsten layer.

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