Method of making microelectronic spring contact elements

• US 6,184,053 B1
• Filed: 05/06/1997
• Issued: 02/06/2001
• Est. Priority Date: 11/16/1993
• Status: Expired due to Term

• Current Assignee: FormFactor Incorporated
• Original Assignee: FormFactor Incorporated
• Inventors: Mathieu, Gaetan L., Eldridge, Benjamin N., Khandros, Igor Y., Pedersen, David V.
• Primary Examiner(s): Mulpuri, Savitri
• Application Number:
  US08/852,152
• Time in Patent Office: 1,372 Days
• Field of Search: 438/825, 438/117, 438/17, 438/15, 438/617, 438/619, 438/637, 438/641, 438/52, 439/81, 257/784, 257/781, 298/42, 298/54, 361/776
• US Class Current: 438/52
• CPC Class Codes: G01R 1/06727 Cantilever beams
• CPC Class Codes: G01R 3/00 Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments , e.g. of probe tips
• CPC Class Codes: H01L 21/4853 Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H01L 2224/11462 Electroplating
• CPC Class Codes: H01L 2224/11472 Profile of the lift-off mask
• CPC Class Codes: H01L 2224/11474 Multilayer masks
• CPC Class Codes: H01L 2224/1152 Self-assembly, e.g. self-agglomeration of the bump material in a fluid
• CPC Class Codes: H01L 2224/11827 Chemical vapour deposition [CVD], e.g. laser CVD
• CPC Class Codes: H01L 2224/13015 comprising protrusions or indentations
• CPC Class Codes: H01L 2224/13017 being non uniform along the bump connector
• CPC Class Codes: H01L 2224/13018 comprising protrusions or indentations
• CPC Class Codes: H01L 2224/13023 the whole bump connector protruding from the surface
• CPC Class Codes: H01L 2224/13139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13157 Cobalt [Co] as principal constituent
• CPC Class Codes: H01L 2224/1316 Iron [Fe] as principal constituent
• CPC Class Codes: H01L 2224/13169 Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/1318 : Molybdenum [Mo] as principal constituent
• CPC Class Codes: H01L 2224/13184 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/13565 : Only outside the bonding interface of the bump connector
• CPC Class Codes: H01L 2224/13582 : Two-layer coating
• CPC Class Codes: H01L 2224/136 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/1369 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 23/49811 : Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01039 : Yttrium [Y]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1433 : Application-specific integrated circuit [ASIC]
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H05K 2201/0311 : Metallic part with specific elastic properties, e.g. bent piece of metal as electrical contact
• CPC Class Codes: H05K 2201/0347 : Overplating, e.g. for reinforcing conductors or bumps; Plating over filled vias reinforcing the conductive pattern H05K3/24
• CPC Class Codes: H05K 3/4092 : Integral conductive tabs, i.e. conductive parts partly detached from the substrate

Abstract

Spring contact elements are fabricated by depositing at least one layer of metallic material into openings defined in masking layers deposited on a surface of a substrate which may be an electronic component such as an active semiconductor device. Each spring contact element has a base end, a contact end, and a central body portion. The contact end is offset in the z-axis (at a different height) and in at least one of the x and y directions from the base end. In this manner, a plurality of spring contact elements are fabricated in a prescribed spatial relationship with one another on the substrate. The spring contact elements make temporary (i.e., pressure) or permanent (e.g., joined by soldering or brazing or with a conductive adhesive) connections with terminals of another electronic component to effect electrical connections therebetween. In an exemplary application, the spring contact elements are disposed on a semiconductor devices resident on a semiconductor wafer so that temporary connections can be made with the semiconductor devices to burn-in and/or test the semiconductor devices.

Claims

1. A method of fabricating spring contact elements on a substrate, comprising:

applying at least one layer of masking material on a surface of a substrate and patterning the masking layer to have openings extending from areas on the substrate to positions which are above the surface of the substrate and which also are laterally and/or transversely offset from the areas;

depositing a first conductive material, the conductive material comprising a metallic material into the openings,

delimiting defined areas of the first conductive material,

selectively depositing a second conductive material substantially over the defined areas of the first conductive material, depositing the second conductive material in sufficient thickness to impart useful resilience to a free standing contact element, and

removing the masking material so that the remaining second conductive material and the first conductive material forms free-standing contact elements extending from the surface of the substrate, each contact element having a base end which is secured to a one of the areas of the substrate and having a free-standing end and delimiting the defined areas so that for each free-standing contact element, the base end has a larger cross-section than the free-standing end of the contact element.

2. Method, according to claim 1, wherein:

the substrate is an electronic component.

3. Method, according to claim 1, wherein:

the substrate is a semiconductor device.

4. Method, according to claim 1, wherein:

the substrate is a semiconductor wafer.

5. A method of making a resilient contact structure, the method comprising

providing an electronic component with a surface and a terminal near the surface,

depositing a first masking layer on the electronic component with an opening near the terminal,

depositing a first conductive layer of conductive material (a) over at least a portion of the terminal to form a first region of the first conductive layer and (b) over at least a portion of the first masking layer to form a second region of the first conductive layer, connecting the first region and second region with a third region of the first conductive layer,

depositing a second masking layer with an opening in the second masking layer that overlaps at least in part the opening in the first masking layer,

delimiting a defined area of the first conductive layer, the defined area including at least a portion of the opening near the terminal, and

later selectively depositing a second conductive material substantially over the defined area of the first conductive layer, depositing the second conductive material in sufficient thickness to impart useful resilience to a resilient contact element,

to form a resilient contact structure electrically connected to the terminal.

6. The method of claim 5 further comprising:

before depositing the first masking layer, depositing an initial conductive layer of conductive material over at least a portion of the electronic component and over at least a portion of the terminal, then depositing the first masking layer over at least a portion of the initial conductive layer.

7. The method of claim 5 further comprising removing the first masking layer to free the resulting resilient contact structure.

8. The method of claim 5 wherein the second region of the first conductive layer is approximately parallel to and displaced from the surface of the electronic component.

9. The method of claim 5 wherein the opening in the first masking layer includes an area on the surface of the electronic component, which may include some or all of the terminal, sufficient to secure the ultimate resilient contact structure.

10. The method of claim 5 wherein the first masking layer comprises a photoresist material.

11. The method of claim 5 wherein the first conductive layer has a thickness of about 450 nanometers.

12. The method of claim 5 wherein the first conductive layer comprises an alloy of titanium and tungsten.

13. The method of claim 5 wherein the seed layer comprises an alloy of titanium and tungsten with a thickness of about 450 nanometers.

14. The method of claim 5 wherein the first conductive layer is deposited by a process selected from the group consisting of sputtering, chemical vapor deposition, physical deposition, and e-beam deposition.

15. The method of claim 5 wherein the first conductive layer is deposited by electrolytic plating.

16. The method of claim 5 wherein the first conductive layer is deposited by a process selected from the group consisting of electrolytic plating, electroless plating, chemical vapor deposition, physical vapor deposition, a process involving the deposition of material out of aqueous solution, and a process causing the deposition of material through induced disintegration of a precursor, liquid or solid.

17. The method of claim 5 wherein the resilient material comprises nickel.

18. The method of claim 5 wherein the resilient material comprises a material selected from the group consisting of nickel, copper, cobalt, iron, gold, silver, elements of the platinum group, noble metals, semi-noble metals, elements of the palladium group, tungsten, and molybdenum.

19. The method of claim 5 wherein the electronic component is a semiconductor device.

20. The method of claim 5 wherein the electronic component is a semiconductor device which has not been singulated from a wafer.

21. The method of claim 5 wherein the electronic component is selected from the group consisting of a semiconductor device, a memory device, a portion of a semiconductor wafer, a space transformer, a ceramic device, a probe card, a chip carrier and a socket.