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CMOS image sensor with equivalent potential diode and method for fabricating the same

DC
  • US 6,184,055 B1
  • Filed: 02/26/1999
  • Issued: 02/06/2001
  • Est. Priority Date: 02/28/1998
  • Status: Expired due to Term
First Claim
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1. A method for fabricating a photodiode used in a CMOS image sensing device, comprising the steps of:

  • providing a semiconductor layer of a first conductive type;

    forming an isolation layer dividing the semiconductor layer into a field region and an active region;

    forming a first impurity region of a second conductive type within the semiconductor layer using a first ion implantation mask, wherein the first ion implantation mask covers a portion of the semiconductor layer so that the first impurity region is apart from the isolation layer; and

    forming a second impurity region of the first conductive type beneath a surface of the semiconductor layer and on the first impurity region using a second ion implantation mask, wherein the second ion implantation mask opens a portion of the semiconductor layer so that a width of the second impurity region is wider than that of the first impurity region and a portion of the second impurity region is in contact with the semiconductor layer.

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