Electrode of semiconductor device, method of manufacturing thereof, and the semicondutor device
First Claim
1. A method of manufacturing an electrode of a semiconductor device comprising the steps of:
- forming a pad on a substrate surface;
forming an electroless barrier metal film, as a pad protection film, on said pad; and
forming a solder precoat layer on a surface of said electroless barrier metal film, having a thickness so that an intermetallic compound layer having a bonded surface bonded substantially to the whole of the surface of said electroless barrier metal film is formed in said solder precoat layer in the vicinity of a boundary surface between said solder precoat film and said electroless barrier metal film.
1 Assignment
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Accused Products
Abstract
An electrode of a semiconductor device comprising: a pad; an electroless diffusion prevention film formed on a surface of the pad for preventing material of the pad from diffusing; a solder precoat film formed on a surface of the electroless diffusion prevention film, and having a thickness not larger than a predetermined value, for preventing a solder bump on the solder precoat film from defective breaking; and a predetermined intermetallic compound layer formed in the solder precoat film in the vicinity of a boundary surface between the solder precoat film and the electroless diffusion prevention film, the intermetallic compound layer having a bonded surface bonded substantially to the whole of the surface of the electroless diffusion prevention film.
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Citations
15 Claims
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1. A method of manufacturing an electrode of a semiconductor device comprising the steps of:
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forming a pad on a substrate surface;
forming an electroless barrier metal film, as a pad protection film, on said pad; and
forming a solder precoat layer on a surface of said electroless barrier metal film, having a thickness so that an intermetallic compound layer having a bonded surface bonded substantially to the whole of the surface of said electroless barrier metal film is formed in said solder precoat layer in the vicinity of a boundary surface between said solder precoat film and said electroless barrier metal film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
forming a solder bump on the solder precoat layer.
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3. The method of manufacturing an electrode of a semiconductor device according to claim 2, wherein said step of forming a solder precoat layer is a step of forming a Pb—
- Sn alloy containing lead not less than 37 wt %.
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4. The method of manufacturing an electrode of a semiconductor device according to claim 2, wherein said step of forming a solder precoat layer is a step of forming a Pb—
- Sn alloy containing lead not less than 50 wt %.
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5. The method of manufacturing an electrode of a semiconductor device according to claim 2, wherein said solder bump is a spherical solder ball.
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6. The method according to claim 2, wherein the intermetallic compound layer is formed in the solder bump.
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7. The method of manufacturing an electrode of a semiconductor device according to claim 1, wherein said thickness is not larger than 15 μ
- m.
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8. The method of manufacturing an electrode of a semiconductor device according to claim 1, wherein said electroless barrier metal film is formed as a pad material diffusion prevention film.
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9. The method of manufacturing an electrode of a semiconductor device according to claim 1, wherein said step of forming a solder precoat layer is a step of coating by a printing method.
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10. The method of manufacturing an electrode of a semiconductor device according to claim 1, wherein said step of forming a solder precoat layer is a step of plating by electroless plating method.
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11. The method according to claim 1, wherein the pad comprises copper.
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12. A method of manufacturing an electrode of a semiconductor device comprising the steps of:
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forming a pad having an upper surface and side surfaces on a substrate surface;
forming a passivation film on the substrate and on the side surfaces and portions of the upper surface of the pad, leaving an exposed portion of the upper surface of the pad;
forming an electroless barrier metal film, as a pad protection film, on said exposed upper surface of the pad, the barrier metal film having side surfaces abutting the passivation film on the upper surface of the pad; and
forming a solder precoat layer on a surface of said electroless barrier metal film, having a thickness so that an intermetallic compound layer having a bonded surface bonded substantially to the whole of the surface of said electroless barrier metal film is formed in said solder precoat layer in the vicinity of a boundary surface between said solder precoat film and said electroless barrier metal film. - View Dependent Claims (13, 14, 15)
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Specification