Semiconductor component with metal-semiconductor junction with low reverse current

• US 6,184,545 B1
• Filed: 09/14/1998
• Issued: 02/06/2001
• Est. Priority Date: 09/12/1997
• Status: Expired due to Term

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Werner, Wolfgang, Tihanyi, Jenoe
• Primary Examiner(s): Tran, Minh Loan
• Assistant Examiner(s): Hu, Shouxiang
• Application Number:
  US09/152,827
• Time in Patent Office: 876 Days
• Field of Search: 257/484, 257/483, 257/342, 257/109, 257/481, 257/475, 257/471, 326/131
• US Class Current: 257/109
• CPC Class Codes: H01L 29/0619 with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/861 Diodes
• CPC Class Codes: H01L 29/872 Schottky diodes

Abstract

The semiconductor component, such as a Schottky diode with a low leakage current, has a metal-semiconductor junction between a first metal electrode and the semiconductor. The semiconductor, which is of a first conductivity type, has a defined drift path and a plurality of supplementary zones of a second conductivity type extending from the semiconductor surface into the drift path. A number of foreign atoms in the supplementary zones is substantially equal to a number of foreign atoms in intermediate zones surrounding the supplementary zones and the number of foreign atoms does not exceed a number corresponding to a breakdown charge of the semiconductor.

Claims

1. A semiconductor component, comprising:

a semiconductor of a first conductivity type with a surface and a drift path;

a first metal electrode disposed on the surface of said semiconductor and forming a metal-semiconductor junction with said semiconductor;

a plurality of supplementary zones of a second conductivity type disposed to extend from said surface into said drift path of said semiconductor, each of said supplementary zones includes a junction zone adjacent said first metal electrode and adjoining the surface of said semiconductor, said junction zone of each supplementary zone having a higher doping concentration than a remainder of said supplementary zone;

a plurality of intermediate zones surrounding said supplementary zones; and

said supplementary zones having a doping concentration substantially equal to a doping concentration in said intermediate zones not exceeding a doping concentration which would result in a barrier breakdown in said semiconductor.

2. The semiconductor component according to claim 1, wherein said supplementary zones extend through the entire drift path in said semiconductor.

3. The semiconductor component according to claim 1, wherein said intermediate zones between said supplementary zones have a lateral extent substantially similar to a lateral extent of said supplementary zones.

4. The semiconductor component according to claim 1, wherein a lateral extent of said supplementary zones and of said intermediate zones is substantially from 1 to 10 μ

m.

5. The semiconductor component according to claim 1, wherein said semiconductor has a first semiconductor layer bounded by said surface and wherein said doping concentration in said intermediate zones is greater than in said first semiconductor layer.

6. The semiconductor component according to claim 1, wherein said supplementary zones are disk-shaped zones embedded in said intermediate zones.

7. The semiconductor component according to claim 1, wherein said supplementary zones are rod-shaped zones embedded in said intermediate zones.

8. The semiconductor component according to claim 1, wherein said junction zone forms a guard ring.