×

Semiconductor component with metal-semiconductor junction with low reverse current

  • US 6,184,545 B1
  • Filed: 09/14/1998
  • Issued: 02/06/2001
  • Est. Priority Date: 09/12/1997
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor component, comprising:

  • a semiconductor of a first conductivity type with a surface and a drift path;

    a first metal electrode disposed on the surface of said semiconductor and forming a metal-semiconductor junction with said semiconductor;

    a plurality of supplementary zones of a second conductivity type disposed to extend from said surface into said drift path of said semiconductor, each of said supplementary zones includes a junction zone adjacent said first metal electrode and adjoining the surface of said semiconductor, said junction zone of each supplementary zone having a higher doping concentration than a remainder of said supplementary zone;

    a plurality of intermediate zones surrounding said supplementary zones; and

    said supplementary zones having a doping concentration substantially equal to a doping concentration in said intermediate zones not exceeding a doping concentration which would result in a barrier breakdown in said semiconductor.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×