Metal spatial filter to enhance model reflectivity in a vertical cavity surface emitting laser

• US 6,185,241 B1
• Filed: 10/29/1998
• Issued: 02/06/2001
• Est. Priority Date: 10/29/1998
• Status: Expired due to Term

• Current Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Original Assignee: Xerox Corporation (Xerox Holdings Corp.)
• Inventors: Sun, Decai
• Primary Examiner(s): Davie, James W.
• Application Number:
  US09/183,909
• Time in Patent Office: 831 Days
• Field of Search: 372/96, 372/46
• US Class Current: 372/96
• CPC Class Codes: H01S 2301/166 Single transverse or lateral mode
• CPC Class Codes: H01S 5/0421 characterised by the semiconducting contacting layers electrodes H01S5/0425
• CPC Class Codes: H01S 5/04253 having specific optical properties, e.g. transparent electrodes
• CPC Class Codes: H01S 5/18308 having a special structure for lateral current or light confinement
• CPC Class Codes: H01S 5/18333 only above the active layer
• CPC Class Codes: H01S 5/18369 based on dielectric materials
• CPC Class Codes: H01S 5/18377 comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers

Abstract

An annular metal layer is provided between a conductive oxide layer and a dielectric mirror in a vertical cavity surface emitting laser. The annular metal layer defines the output window for the laser cavity which matches the TEM₀₀ fundamental mode of the light beam emitted by the active region of the VCSEL. The metal layer outside the output window provides modal reflectivity discrimination against high order transverse modes of the light beam emitted by the active region of the VCSEL.

Claims

1. A surface emitting laser for emitting coherent light comprising:

a substrate;

a plurality of semiconductor layers formed on said substrate;

one or more of said plurality of semiconductor layers forming an active region;

a conductive oxide semiconductor layer being one of said plurality of semiconductive layers,

an annular metal layer formed on said conductive oxide semiconductor layer, said annular metal layer forming an output window for the fundamental mode of coherent light emitted by said active region, said annular metal layer suppressing reflectivity for the high orders of coherent light emitted by said active region;

a mirror of dielectric layers having quarterwave thickness formed on said annular metal layer and within said annular metal layer on said conductive oxide semiconductor layer; and

first and second electrodes which enable biasing of said active region to emit coherent light, said first electrode being formed on said annular metal layer.

2. The surface emitting laser for emitting coherent light of claim 1 wherein said annular metal layer shifts the phase of said high orders of light emitted by said active region to suppress the reflectivity of said high orders of coherent light emitted by said active region.

3. The surface emitting laser for emitting coherent light of claim 1 wherein said annular metal layer is gold.

4. The surface emitting laser for emitting coherent light of claim 1 wherein said annular metal layer is silver, aluminum or titanium.

5. The surface emitting laser for emitting coherent light of claim 1 wherein said conductive oxide semiconductor layer is indium tin oxide.

6. The surface emitting laser for emitting coherent light of claim 1 wherein said conductive oxide semiconductor layer is cadmium tin oxide.

7. The surface emitting laser for emitting coherent light of claim 1 further comprising one or more of said plurality of semiconductor layers forming a distributed Bragg reflector, said conductive oxide semiconductor layer being formed on said distributed Bragg reflector.

8. The surface emitting laser for emitting coherent light of claim 7 further comprising ion implantation regions in said distributed Bragg reflector for optically and electrically confining a laser cavity for said coherent light emitted by said active region through said output window of said annular metal layer.

9. The surface emitting laser for emitting coherent light of claim 1 wherein said annular metal layer is gold and said conductive oxide semiconductor layer is indium tin oxide.