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Process for making high yield, DC stable proton exchanged waveguide for active integrated optic devices

  • US 6,185,355 B1
  • Filed: 09/01/1998
  • Issued: 02/06/2001
  • Est. Priority Date: 09/01/1998
  • Status: Expired due to Fees
First Claim
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1. An active integrated optic (IO) device, comprising(a) a crystalline material substrate having at least one surface;

  • (b) an integrated optic circuit, including an optical waveguide and at least one electrode disposed in juxtaposition on said surface to provide at least one integrated optic region thereon;

    as characterized by;

    (c) said optical waveguide being formed in said surface by a two step proton exchange process comprising the steps of;

    (i) immersing said substrate for a period of time in a heated bath including at least 70% by weight of a strong acid, and (ii) cyclically differentially annealing said substrate by heating and cooling said substrate through at least a first annealing cycle comprising first heating said substrate through an up-ramp to a first elevated temperature above room temperature, and cooling said substrate from said elevated temperature through a down-ramp to a first low temperature which is at least seventy-five degrees C. lower than said elevated temperature, and a second annealing cycle subsequent to said first annealing cycle and comprising first heating said substrate through an up-ramp to a second elevated temperature above room temperature and above said low temperature, and cooling said substrate through a down-ramp to a second low temperature which is at least seventy-five degrees C. lower than said second elevated temperature.

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