Process for making high yield, DC stable proton exchanged waveguide for active integrated optic devices
First Claim
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1. An active integrated optic (IO) device, comprising(a) a crystalline material substrate having at least one surface;
- (b) an integrated optic circuit, including an optical waveguide and at least one electrode disposed in juxtaposition on said surface to provide at least one integrated optic region thereon;
as characterized by;
(c) said optical waveguide being formed in said surface by a two step proton exchange process comprising the steps of;
(i) immersing said substrate for a period of time in a heated bath including at least 70% by weight of a strong acid, and (ii) cyclically differentially annealing said substrate by heating and cooling said substrate through at least a first annealing cycle comprising first heating said substrate through an up-ramp to a first elevated temperature above room temperature, and cooling said substrate from said elevated temperature through a down-ramp to a first low temperature which is at least seventy-five degrees C. lower than said elevated temperature, and a second annealing cycle subsequent to said first annealing cycle and comprising first heating said substrate through an up-ramp to a second elevated temperature above room temperature and above said low temperature, and cooling said substrate through a down-ramp to a second low temperature which is at least seventy-five degrees C. lower than said second elevated temperature.
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Abstract
A process for greatly improving the DC drift problem associated with LiNbO3 and LiTaO3 substrates. The process immerses the substrates in a heat bath comprised of a strong acid and then subjects the substrates to cyclical annealing.
73 Citations
17 Claims
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1. An active integrated optic (IO) device, comprising
(a) a crystalline material substrate having at least one surface; -
(b) an integrated optic circuit, including an optical waveguide and at least one electrode disposed in juxtaposition on said surface to provide at least one integrated optic region thereon;
as characterized by; (c) said optical waveguide being formed in said surface by a two step proton exchange process comprising the steps of;
(i) immersing said substrate for a period of time in a heated bath including at least 70% by weight of a strong acid, and (ii) cyclically differentially annealing said substrate by heating and cooling said substrate through at least a first annealing cycle comprising first heating said substrate through an up-ramp to a first elevated temperature above room temperature, and cooling said substrate from said elevated temperature through a down-ramp to a first low temperature which is at least seventy-five degrees C. lower than said elevated temperature, and a second annealing cycle subsequent to said first annealing cycle and comprising first heating said substrate through an up-ramp to a second elevated temperature above room temperature and above said low temperature, and cooling said substrate through a down-ramp to a second low temperature which is at least seventy-five degrees C. lower than said second elevated temperature. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of fabricating a proton exchanged integrated optic device, comprising the steps of
(a) preparing a crystalline material substrate with at least one surface; -
(b) forming at least one channel in said surface to produce a selected integrated optic device waveguide;
(c) immersing said substrate in a heated bath of strong acid; and
,(d) cyclically differentially annealing said substrate by heating and cooling said substrate through at least a first annealing cycle comprising first heating said substrate through an up-ramp to a first elevated temperature, and cooling said substrate from said elevated temperature through a down-ramp to a first low temperature which is at least seventy-five degrees C. lower than said elevated temperature, and a second annealing cycle subsequent to said first annealing cycle and comprising first heating said substrate through an up-ramp to a second elevated temperature above room temperature and above said low temperature, and cooling said substrate through a down-ramp to a second low temperature which is at least seventy-five degrees C. lower than said second elevated temperature. - View Dependent Claims (11, 12, 13, 14)
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15. A method of fabricating a proton exchanged integrated optic device, comprising the steps of
(a) preparing a crystalline material substrate with at least one surface; -
(b) forming at least one channel in said surface to produce a selected integrated optic device waveguide;
(c) immersing said substrate in a heated bath of strong acid; and
,(d) cyclically differentially annealing said substrate by heating and cooling said substrate through at least a first annealing cycle comprising first heating said substrate through an up-ramp to a first elevated temperature, and cooling said substrate from said elevated temperature through a down-ramp to a first low temperature which is at least seventy-five degrees C. lower than said elevated temperature, a second annealing cycle subsequent to said first annealing cycle and comprising first heating said substrate through an up-ramp to a second elevated temperature above said low temperature, and cooling said substrate through a down-ramp to a second low temperature which is at least seventy-five degrees C. lower than said second elevated temperature, and a third annealing cycle subsequent to said second annealing cycle and comprising first heating said substrate through an up-ramp to a third elevated temperature above said second low temperature, and cooling said substrate through a down-ramp to a third low temperature which is at least seventy-five degrees C. lower than said third elevated temperature. - View Dependent Claims (16, 17)
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Specification