Shielded platen design for plasma immersion ion implantation

• US 6,186,091 B1
• Filed: 10/02/1998
• Issued: 02/13/2001
• Est. Priority Date: 02/11/1998
• Status: Expired due to Term

• Current Assignee: Silicon Genesis
• Original Assignee: Silicon Genesis
• Inventors: Chu, Paul K., Chan, Chung
• Primary Examiner(s): Bueker, Richard
• Assistant Examiner(s): FIELER, ERIN L
• Application Number:
  US09/165,528
• Time in Patent Office: 865 Days
• Field of Search: 118/723.E, 118/723.I, 118/728, 118/721, 118/716
• US Class Current: 118/723.00E
• CPC Class Codes: C23C 14/48 Ion implantation
• CPC Class Codes: C23C 14/564 Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation
• CPC Class Codes: H01J 37/32477 characterised by the means for protecting vessels or internal parts, e.g. coatings

Abstract

A plasma treatment system (200) for implantation with a novel susceptor with shielding (203). The system (200) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a substrate. A shield (203) is disposed adjacent to the susceptor for blocking impurities that may possibly be introduced from a backside of the susceptor. The shield allows fewer impurities to be sputtered from the backside of the susceptor. In a specific embodiment, the chamber has a plurality of substantially planar rf transparent windows (26) on a surface of the chamber. The system (200) also has an rf generator (66) and at least two rf sources in other embodiments.

Claims

1. A plasma treatment system for implantation, said system comprising:

a chamber in which a plasma is generated in said chamber;

a susceptor disposed in said chamber to support a substrate; and

a shield disposed adjacent to said susceptor for blocking impurities that may possibly be introduced from a backside of said susceptor and reducing an amount of said impurities from said backside of said susceptor.

2. The system of claim 1 wherein said chamber comprises a plurality of substantially planar rf transparent windows on a surface of said chamber.

3. The system of claim 1 further comprising:

an rf generator; and

at least two rf sources, each external to said vacuum chamber and each said rf source electrically being connected to said rf generator and being juxtaposed to a respective one of said plurality rf transparent windows, and being operative to generate said plasma in the vacuum chamber;

said rf sources being operative to produce a local, substantially uniform plasma proximate said substrate.

4. The system of claim 3 further comprising at least one tuning circuit, each said at least one tuning circuit electrically connected to one of said at least two rf sources.

5. The system of claim 1 wherein said shield is an annular structure disposed adjacent to said susceptor.

6. The system of claim 1 wherein said shield comprises a silicon bearing material.

7. The system of claim 1 wherein said substrate is a silicon wafer.

8. The system of claim 1 wherein said shield comprises an area to block impurities that may possibly be introduced from a backside of said susceptor.

10. The system of claim 1 wherein said susceptor comprises an aluminum bearing material.

9. A plasma treatment system for implantation, said system comprising:

a chamber in which a plasma is generated in said chamber;

a stainless steel bearing material susceptor disposed in said chamber to support

a substrate; and

a shield disposed adjacent to said susceptor for blocking impurities that may possibly be introduced from a backside of said susceptor and reducing an amount of said impurities from said backside of said susceptor, said shield comprising a stainless steel bearing material.

11. A plasma treatment system provided in a cluster tool for implantation, said system comprising:

a chamber in which a plasma is generated in said chamber;

a susceptor disposed in said chamber to support a substrate; and

a shield disposed adjacent to said susceptor for blocking impurities that may possibly be introduced from a backside of said susceptor and reducing an amount of said impurities from said backside of said susceptor.