Method of preparing indium oxide/tin oxide target for cathodic sputtering
First Claim
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1. A method for manufacturing an indium oxide/tin oxide sputtering target comprising:
- providing a powder consisting essentially of co-precipitated In2O3 and SnO2, said mixture containing 5-15% by wt. SnO2;
annealing said mixture at a temperature of from 1350°
C. to 1650°
C. so that solid solutions of In2O3 and SnO2 are formed and that the grain size is in the range of 2 to 50 microns;
partially reducing the annealed powder, and compacting the partially reduced annealed powder with hot isostatic pressing at a temperature above 800°
C.
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Abstract
An indium oxide/tin oxide powder with 5-15 wt. % tin oxide is subjected to an annealing treatment at T≧1, 000° C. and is then partially reduced and subjected to hot isostatic pressing to produce a sputtering target with a density of at least 95% of the theoretical density and a thermal conductivity of at least 14 Wm−1K−1.
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Citations
1 Claim
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1. A method for manufacturing an indium oxide/tin oxide sputtering target comprising:
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providing a powder consisting essentially of co-precipitated In2O3 and SnO2, said mixture containing 5-15% by wt. SnO2;
annealing said mixture at a temperature of from 1350°
C. to 1650°
C. so that solid solutions of In2O3 and SnO2 are formed and that the grain size is in the range of 2 to 50 microns;
partially reducing the annealed powder, and compacting the partially reduced annealed powder with hot isostatic pressing at a temperature above 800°
C.
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Specification