Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure
First Claim
1. A method of producing a Group III nitride optoelectronic device on a silicon carbide substrate comprising:
- forming a plurality of discrete crystal portions selected from the group consisting of gallium nitride and indium gallium nitride on the surface of a silicon carbide substrate wherein the step of forming the discrete crystal portions comprises forming the discrete crystal portions in an amount sufficient to minimize or eliminate the heterobarrier but less than an amount that would detrimentally affect or destroy the function of any resulting diode device built on the silicon carbide substrate;
forming an aluminum gallium nitride buffer on the surface of the silicon carbide substrate with the discrete crystal portions, and wherein the discrete crystal portions minimize or eliminate the heterobarrier between the silicon carbide substrate and the aluminum gallium nitride buffer layer; and
forming an optoelectronic device with a Group III nitride active layer on the buffer layer.
1 Assignment
0 Petitions
Accused Products
Abstract
An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride and indium gallium nitride between the silicon carbide substrate and the optoelectronic diode; and a stress-absorbing structure comprising a plurality of predetermined stress-relieving areas within the crystal structure of the buffer structure, so that stress-induced cracking that occurs in the buffer structure occurs at predetermined areas rather than elsewhere in the buffer structure.
-
Citations
10 Claims
-
1. A method of producing a Group III nitride optoelectronic device on a silicon carbide substrate comprising:
-
forming a plurality of discrete crystal portions selected from the group consisting of gallium nitride and indium gallium nitride on the surface of a silicon carbide substrate wherein the step of forming the discrete crystal portions comprises forming the discrete crystal portions in an amount sufficient to minimize or eliminate the heterobarrier but less than an amount that would detrimentally affect or destroy the function of any resulting diode device built on the silicon carbide substrate;
forming an aluminum gallium nitride buffer on the surface of the silicon carbide substrate with the discrete crystal portions, and wherein the discrete crystal portions minimize or eliminate the heterobarrier between the silicon carbide substrate and the aluminum gallium nitride buffer layer; and
forming an optoelectronic device with a Group III nitride active layer on the buffer layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
Specification
-
- Resources
-
Current AssigneeCREE Incorporated (Wolfspeed, Inc.)
-
Original AssigneeCREE Incorporated (Wolfspeed, Inc.)
-
InventorsEdmond, John Adam, Kong, Hua-Shuang, Doverspike, Kathleen Marie, Leonard, Michelle Turner
-
Primary Examiner(s)Bowers, Charles
-
Assistant Examiner(s)CHRISTIANSON, KEITH ALAN
-
Application NumberUS09/399,445Time in Patent Office512 DaysField of Search438/39, 438/41, 438/42, 438/44, 438/46, 438/47, 438/493, 438/494, 438/931US Class Current438/46CPC Class CodesH01L 21/02378 Silicon carbideH01L 21/02458 NitridesH01L 21/02513 MicrostructureH01L 21/0254 NitridesH01L 21/02642 Mask materials other than S...H01L 33/007 comprising nitride compounds
