Method for attractive bonding of two crystalline substrates
First Claim
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1. A process for fabricating a device comprising the steps of:
- selecting a first single crystal substrate having a first crystal lattice and a second single crystal substrate having a second crystal lattice different from the first crystal lattice;
placing a surface of the first single crystal substrate in physical contact with a surface of the second single crystal substrate;
placing a flexible membrane in physical contact with the contacted first single crystal substrate and second single crystal substrate; and
applying pneumatic pressure to the flexible membrane for a duration sufficient to obtain a bond between the surface of the first single crystal substrate and the second single crystal substrate.
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Abstract
A process for device fabrication is disclosed in which two substrates having different crystal lattices are bound together. In the process the substrate surfaces are placed in physical contact with each other. A flexible membrane is placed in physical contact with a surface of one of the substrates. Pneumatic force is applied to the flexible membrane. The duration of the contact and the pressure of the contact are selected to facilitate a bond between the two substrate surfaces that results from attractive Van der Waals'"'"' forces between the two surfaces. The bulk of one of the substrates is then typically removed. Thereafter, the bonded surfaces are heated to a high temperature to effect a permanent bond.
47 Citations
8 Claims
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1. A process for fabricating a device comprising the steps of:
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selecting a first single crystal substrate having a first crystal lattice and a second single crystal substrate having a second crystal lattice different from the first crystal lattice;
placing a surface of the first single crystal substrate in physical contact with a surface of the second single crystal substrate;
placing a flexible membrane in physical contact with the contacted first single crystal substrate and second single crystal substrate; and
applying pneumatic pressure to the flexible membrane for a duration sufficient to obtain a bond between the surface of the first single crystal substrate and the second single crystal substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
removing the second substrate, leaving the single crystal device layer bonded to the first single crystal substrate; and
heating at a high temperature the first single crystal substrate to increase the strength of the bond between the first single crystal substrate and the single crystal device layer bonded thereto.
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7. The process of claim 6 wherein the high temperature heating is performed at a temperature of about 630°
- C. to about 650°
C. for a duration of about 15 minutes to about 30 minutes.
- C. to about 650°
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8. The process of claim 1 further comprising the step of:
cleaning the first surface of the first single crystal substrate and the single crystal device layer before the step of placing the first single crystal substrate in physical contact with the second single crystal substrate.
Specification
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Current AssigneeAvago Technologies International Sales Pte Limited (Broadcom, Inc.)
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Original AssigneeLucent Technologies, Inc. (Nokia Corporation)
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InventorsHui, Sanghee Park, Levine, Barry Franklin, Pinzone, Christopher James, Thomas, Gordon Albert
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Primary Examiner(s)Niebling, John F.
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Assistant Examiner(s)Simkovic, Viktor
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Application NumberUS09/465,884Time in Patent Office424 DaysField of Search438/455, 438/456, 438/457, 438/458, 438/459, 438/107, 438/118, 438/119, 438/938, 451/41US Class Current438/455CPC Class CodesH01L 21/187 by direct bondingH01L 31/1075 in which the active layers,...Y10S 438/938 Lattice strain control or u...
