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Method and apparatus for etching a substrate

  • US 6,187,685 B1
  • Filed: 02/08/1999
  • Issued: 02/13/2001
  • Est. Priority Date: 08/01/1997
  • Status: Expired due to Term
First Claim
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1. A method of etching a feature in a substrate in a chamber, the method comprising alternately etching by means of a plasma and depositing a passivation layer by means of a plasma, wherein a bias frequency is applied to the substrate which is at or below the ion plasma frequency.

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