Method of forming film on semiconductor substrate in film-forming apparatus

• US 6,187,691 B1
• Filed: 05/15/2000
• Issued: 02/13/2001
• Est. Priority Date: 05/14/1999
• Status: Expired due to Term

• Current Assignee: ASM Japan K.K. (ASM International NV)
• Original Assignee: ASM Japan K.K. (ASM International NV)
• Inventors: Fukuda, Hideaki, Arai, Hiroki, Yoshizaki, Yu
• Primary Examiner(s): Bowers, Charles
• Assistant Examiner(s): Ghyka, Alexander G.
• Application Number:
  US09/570,195
• Time in Patent Office: 274 Days
• Field of Search: 438/758, 438/778, 438/905, 427/585, 427/588, 118/723.E
• US Class Current: 438/758
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating
• CPC Class Codes: C23C 8/36 using ionised gases, e.g. ionitriding
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/3185 of siliconnitrides
• CPC Class Codes: Y10S 438/905 Cleaning of reaction chamber

Abstract

A thin film is formed on a substrate in a film-forming apparatus which has upper and lower electrodes between which radio-frequency power is applied in a processing chamber, and a heater is used to heat the lower electrode on which the substrate is loaded. In one lot, at least one substrate is processed. The electrode is heated at the end of a stand-by period between lots and before starting the film-forming process.

Claims

1. A method of forming a thin film on a substrate in a film-forming apparatus comprising upper and lower electrodes in a processing chamber, between which radio-frequency power is applied, wherein a film-forming process is conducted at a designated temperature on a substrate loaded on the lower electrode which is provided with a heater, and in one lot, at least one substrate is processed, said method comprising:

at the end of a stand-by period in which no film forming is performed between lots and before initiating the film-forming process, heating the lower electrode to a temperature close to the temperature for film forming.

2. The method as claimed in claim 1, wherein in one lot, multiple substrates are continuously processed.

3. The method as claimed in claim 1, wherein the heater and the lower electrode are not integrated, and the heating step is conducted not only by using the heater but also by supplying gas into the processing chamber to increase heat conductivity between the heater and the electrode.

4. The method as claimed in claim 3, wherein the pressure of gas supplied into the processing chamber is no less than 1 Torr.

5. The method as claimed in claim 3, wherein the gas supplied into the processing chamber is a cleaning gas activated by a remote plasma discharge apparatus.

6. The method as claimed in claim 1, wherein the heating step is conducted by generating plasma by supplying a reaction gas into the processing chamber.

7. The method as claimed in claim 6, wherein the plasma-generating step further comprises forming a dummy film on the lower electrode at lower radiofrequency power than when film forming is conducted on a substrate.

8. The method as claimed in claim 7, wherein the plasma-generating step further comprises dummy-cleaning the dummy film formed on the electrode, wherein heat is generated when a reaction occurs between the dummy film and a cleaning gas for dummy-cleaning.

9. The method as claimed in claim 8, wherein the dummy-cleaning process is conducted by supplying into the processing chamber a cleaning gas activated by a remote plasma discharge apparatus.

10. The method as claimed in claim 7, further comprising supplying gas into the processing chamber after the dummy-cleaning process.

11. The method as claimed in claim 1, wherein the heating step is completed before completion of the loading of a substrate on the electrode.