Arrangement and method relating to tunable devices through the controlling of plasma surface waves
First Claim
1. Tunable microwave monolithic integrated circuit comprising a dielectric material with a variable dielectric constant and a superconducting arrangement so arranged in relation to the dielectric material that at least one interface is formed between the superconducting arrangement and the dielectric material,wherein the dielectric material is low-loss, non-linear bulk material and tuning means are provided for phase velocity tuning of microwaves by controlling propagation of surface plasma waves of the microwaves along the interface(s).
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Abstract
A tunable microwave monolithic integrated circuit includes a dielectric material with a variable dielectric constant. A superconducting material with a negative dielectric constant is provided which is arranged in relation to the dielectric material in such a way that at least one interface is formed between the superconducting material and the dielectric material. The dielectric material is a low loss non-linear bulk material. Phase velocity tuning of microwaves is provided through controlling the propagation of surface plasma waves of the microwaves along the interface(s).
12 Citations
30 Claims
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1. Tunable microwave monolithic integrated circuit comprising a dielectric material with a variable dielectric constant and a superconducting arrangement so arranged in relation to the dielectric material that at least one interface is formed between the superconducting arrangement and the dielectric material,
wherein the dielectric material is low-loss, non-linear bulk material and tuning means are provided for phase velocity tuning of microwaves by controlling propagation of surface plasma waves of the microwaves along the interface(s).
- 27. Method for tuning the phase velocity of microwaves, in the frequency range of approximately 1-2 GHz in a microwave monolithic integrated circuit, comprising the step of controlling the propagation of surface plasma waves along interfaces(s) between a non-linear bulk dielectric material on which at least one superconducting film is arranged.
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30. Method for tuning the phase velocity of microwaves in the frequency range of approximately 1-2 GHz in a microwave monolithic integrated circuit comprising one of a parallel plate resonator and a multimode filter wherein at least one superconducting film having a negative dielectric constant, is arranged on a non-linear bulk dielectric material with a high dielectric constant comprising the steps of preventing all transverse electric modes from propagating and tuning the microwave integrated circuit at least by applying a variable DC biasing voltage to the superconducting films, thereby controlling propagation of surface plasma waves along an interface between the at least one superconducting film and the bulk dielectric material.
Specification