Electronic devices with rubidium barrier film and process for making same

• US 6,188,134 B1
• Filed: 08/20/1998
• Issued: 02/13/2001
• Est. Priority Date: 08/20/1998
• Status: Expired due to Fees

• Current Assignee: the united states of america as represented by the secretary of the navy
• Original Assignee: the united states of america as represented by the secretary of the navy
• Inventors: Santiago, Francisco, Boulais, Kevin A., Chu, Tak Kin, Stumborg, Michael F.
• Primary Examiner(s): Saadat, Mahshid
• Assistant Examiner(s): Warren, Matthew E.
• Application Number:
  US09/137,087
• Time in Patent Office: 908 Days
• Field of Search: 257/751, 257/762, 257/767
• US Class Current: 257/751
• CPC Class Codes: C23C 14/025 Metallic sublayers
• CPC Class Codes: C23C 14/18 on other inorganic substrates
• CPC Class Codes: C23C 14/5806 Thermal treatment
• CPC Class Codes: C23C 16/0281 of metallic sub-layers C23C16/029 takes precedence
• CPC Class Codes: C23C 16/14 Deposition of only one other metal element
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76846 Layer combinations

Abstract

A semiconductor device having a barrier film comprising an extremely thin film formed of one or more monolayers each comprised of a two-dimensional array of metal atoms. In one exemplary aspect, the barrier film is used for preventing the diffusion of atoms of another material, such as a copper conductor, into a substrate, such as a semiconducting material or an insulating material. In one mode of making the semiconductor device, the barrier film is formed by depositing a precursor, such as a metal halide (e.g., BaF₂), onto the substrate material, and then annealing the resulting film on the substrate material to remove all of the constituents of the temporary heteroepitaxial film except for a monolayer of metal atoms left behind as attached to the surface of the substrate. A conductor, such as copper, deposited onto the barrier film is effectively prevented from diffusing into the substrate material even when the barrier film is only one or several monolayers in thickness. The extremely thin barrier film makes possible a significant increase in the component density and a corresponding reduction in the number of layers in large scale integrated circuits, as well as improved performance.

Claims

1. A semiconductor device comprising:

a substrate;

a barrier film having a monolayer of metallic rubidium atoms on said substrate, wherein said barrier film has a thickness not more than approximately 100 Å

; and

a metallic material on said barrier film.

2. A semiconductor device according to claim 1, wherein said barrier film comprise a plurality of contiguous monolayers of rubidium atoms located on said surface of said substrate material.

3. A semiconductor device according to claim 1, wherein said metallic material comprises copper.

4. A semiconductor device according to claim 1, in which the metallic material comprises a metal selected from the group consisting of copper, gold, silver, and platinum.

5. A semiconductor device according to claim 1, wherein said barrier film has a thickness not more than approximately 20 Å

.

6. A semiconductor device comprising:

a substrate material having a surface;

a barrier film on said substrate surface, said barrier film comprising a layer comprising elemental rubidium atoms on said surface;

a conductor on said barrier film, said conductor having a tendency to diffuse into said substrate material if in direct contact therewith; and

wherein said layer comprising elemental rubidiums atom serves as a barrier, inhibiting diffusion of the conductor into the substrate material.

7. A semiconductor device according to claim 6, wherein said barrier film has a thickness of not more than approximately 100 Å

.

8. A semiconductor device according to claim 6, wherein said barrier film has a thickness of not more than approximately 20 Å

.

9. A semiconductor device according to claim 6, wherein said barrier film has a thickness of not more than approximately 5 Å

.

10. A semiconductor device according to claim 6, wherein said barrier film is a single monolayer of rubidium atoms attached to said surface of said substrate material.

11. A semiconductor device according to claim 6, wherein said barrier film comprise a plurality of contiguous monolayers of rubidium atoms located on said surface of said substrate material.

12. A semiconductor device according to claim 6, in which said substrate material is a semiconductor.

13. A semiconductor device according to claim 6, in which said substrate material is a silicon semiconductor.

14. A semiconductor device according to claim 6, in which said substrate material is an insulating material.

15. A semiconductor device according to claim 6, in which said substrate material is silicon oxide.

16. A semiconductor device according to claim 6, in which the conductor is a metal.

17. A semiconductor device according to claim 6, in which the conductor comprises copper.

18. A semiconductor device comprising:

a substrate;

a barrier film comprised of a layer of elemental rubidium atoms on said substrate, wherein said barrier film has a thickness of not more than approximately 100 Å

; and

a metallic material on said barrier film.

19. A semiconductor device comprising:

a substrate;

a barrier film comprising rubidium atoms having a thickness less than approximately 20 Å

on said substrate; and

a metallic material on said barrier film.