Organic electroluminescent device and preparation method with ITO electrode (111) orientation

• US 6,188,176 B1
• Filed: 07/02/1998
• Issued: 02/13/2001
• Est. Priority Date: 07/15/1997
• Status: Expired due to Term

• Current Assignee: Futaba Corporation
• Original Assignee: TDK Corporation
• Inventors: Nakaya, Kenji, Kagaya, Yasunaga, Onitsuka, Osamu, Codama, Mitsufumi
• Primary Examiner(s): Patel, Vip
• Assistant Examiner(s): Gerike, Matthew J.
• Application Number:
  US09/109,062
• Time in Patent Office: 957 Days
• Field of Search: 313/498, 313/499, 313/500, 313/501, 313/502, 313/503, 313/504, 313/505, 313/506, 445/46, 428/690, 428/691, 427/108, 427/126.2, 427/126.3
• US Class Current: 313/504
• CPC Class Codes: H05B 33/28 of translucent electrodes
• CPC Class Codes: H10K 50/81 Anodes
• CPC Class Codes: H10K 59/8051 Anodes

Abstract

An organic EL device includes a substrate (21), a hole infecting electrode (22), an electron injecting electrode (25), and organic layers (23, 24) disposed between the electrodes. The hole injecting electrode (22) is an ITO electrode having (111) orientation. Due to improved film formation, close contact and physical properties at the interface between the hole injecting electrode and the organic layer, the device has a long lifetime, high luminance, high efficacy, and quality display and prevents the occurrence of current leakage and dark spots.

Claims

1. An organic electroluminescent device comprising a substrate having a surface, a hole injecting electrode disposed on the substrate surface, an electron injecting electrode, and at least one organic layer disposed between the electrodes, wherein

said hole injecting electrode is an ITO electrode having (111) orientation.

2. The device of claim 1 wherein when analyzed for x-ray diffraction by the rotating crystal method, the ITO electrode exhibits a diffraction intensity ratio of (400)/(222) reflection of up to 0.6.

3. The device of claim 1 wherein when analyzed for x-ray diffraction by the rotating crystal method, the ITO electrode exhibits an integrated intensity ratio of (400)/(222) reflection of up to 0.5.

4. The device of claim 1 wherein said substrate has a mean surface roughness Ra of up to 10 nm and a maximum surface roughness Rmax of up to 50 nm.

5. The device of claim 1 wherein said ITO electrode at its surface remote from said substrate has a mean surface roughness Ra of up to 10 nm and a maximum surface roughness Rmax of up to 50 nm.

6. A method for preparing an organic electroluminescent device comprising the steps of

forming an ITO electrode on a substrate at a substrate temperature of 10 to 150°

C., and

heat treating the electrode at 100 to 450°

C.