Growth of epitaxial semiconductor material with improved crystallographic properties

• US 6,190,453 B1
• Filed: 07/14/1999
• Issued: 02/20/2001
• Est. Priority Date: 07/14/1999
• Status: Expired due to Term

• Current Assignee: SEH America, Inc. (Shin-Etsu Chemical Company Limited)
• Original Assignee: SEH America, Inc. (Shin-Etsu Chemical Company Limited)
• Inventors: Kononchuk, Oleg V., Boydston, Mark R., Dietze, Gerald R.
• Primary Examiner(s): Utech, Benjamin L.
• Assistant Examiner(s): CHAMPAGNE, DONALD
• Application Number:
  US09/353,195
• Time in Patent Office: 587 Days
• Field of Search: 117/3, 117/89, 117/93, 117/935
• US Class Current: 117/89
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 29/06 Silicon

Abstract

A method of growing epitaxial semiconductor layers with reduced crystallographic defects. The method includes growing a first epitaxial semiconductor layer on a semiconductor substrate under conditions of relatively high temperature and low source gas flow to heal defects in or on the surface of the substrate. Subsequently, a second epitaxial semiconductor layer is grown on the first layer under conditions of relatively low temperature and high source gas flow. The first epi layer acts as a low-defect seed layer by preventing defects in the surface of the substrate from propagating into the second epi layer. Optionally, a hydrogen chloride etch may be employed during a portion of the first epi layer growth to increase the efficacy of the first layer.

Claims

1. A method of forming an epitaxial semiconductor layer on a semiconductor substrate, the method comprising.

placing a silicon substrate having a front surface within an epitaxial reaction chamber;

adjusting the temperature of the substrate to a first temperature suitable for epitaxial silicon growth;

flowing a first flow of source gas into the reaction chamber at a first flow rate to grow a first epitaxial silicon layer on the front surface of the substrate to cover crystallographic defects in the front surface;

adjusting the temperature of the substrate to a second temperature suitable for epitaxial silicon growth, where the second temperature is lower than the first temperature; and

flowing a second flow of source gas into the reaction chamber at a second flow rate when the substrate is at the second temperature to grow a second epitaxial silicon layer on the first layer, where the second flow rate is higher than the first flow rate;

where the first and second layers each have a thickness, and the second layer is thicker than the first layer.

2. The method of claim 1, further comprising the steps of controlling the first flow of source gas and the second flow of source gas into the reaction chamber so that the first layer is grown more slowly than the second layer.

3. The method of claim 1, wherein the flow rate of the first flow of source gas is approximately 10 percent or less than the flow rate of the second flow of source gas.

4. The method of claim 1, wherein the step of adjusting the temperature of the substrate to the second temperature is begun during the step of flowing the first flow of source gas into the reaction chamber.

5. The method of claim 4, wherein the step of flowing the first flow of source gas into the reaction chamber is completed before the substrate reaches the second temperature.

6. The method of claim 1, wherein the step of adjusting the temperature of the substrate to the second temperature is begun at substantially the same time as the step of flowing the first flow of source gas into the reaction chamber.

7. The method of claim 1, further comprising the step of flowing an etchant gas into the reaction chamber when the substrate is at the first temperature.

8. The method of claim 7, wherein the step of flowing the first flow of source gas into the reaction chamber is begun while the etchant gas is flowing into the reaction chamber.

9. The method of claim 7, wherein the step of flowing the first flow of source gas into the reaction chamber is begun at substantially the same time that the step of flowing the etchant gas is completed.

10. The method of claim 9, wherein the step of adjusting the temperature of the substrate to the second temperature is begun at substantially the same time as the step of flowing the first flow of source gas into the reaction chamber.