Semiconductor micromachine and manufacturing method thereof

• US 6,190,571 B1
• Filed: 12/19/1997
• Issued: 02/20/2001
• Est. Priority Date: 12/20/1996
• Status: Expired due to Fees

• Current Assignee: Aisin Seiki Co., Ltd. (Aisin Corp.)
• Original Assignee: Aisin Seiki Co., Ltd. (Aisin Corp.)
• Inventors: Kato, Manabu
• Primary Examiner(s): Gulakowski, Randy
• Assistant Examiner(s): OLSEN, ALLAN W
• Application Number:
  US08/994,759
• Time in Patent Office: 1,159 Days
• Field of Search: 735/040.2, 735/041.4, 216/2, 216/13, 216/95, 216/96, 216/97, 216/99, 438/510
• US Class Current: 216/2
• CPC Class Codes: G01C 19/5719 using planar vibrating masses driven in a translation vibration along an axis

Abstract

A semiconductor micromachine and method of making the micromachine, wherein the micromachine includes a substrate and a movable portion made of a semiconductor thin film. The movable portion is arranged opposite the substrate with a gap interposed therebetween, and is supported by acicular bodies. This movable portion is provided with electrode sections, wires and an electrical insulation section interconnecting the electrode sections and the wires. The electrical insulation section prevents crosstalk of signals among the electrode sections and the wires to achieve a high S/N ratio as well as a high degree of design freedom. In order to achieve this purpose, the semiconductor micromachine of the present invention includes.

Claims

1. A manufacturing method of a semiconductor micromachine having a substrate, a movable portion arranged opposite said substrate with a gap interposed therebetween, said movable portion comprising a semiconductor having a plurality of electrode sections and an electrical insulation section interconnecting the electrode sections, and supporting bodies which floatably support said movable portion, comprising the steps of:

forming an etching layer on said substrate;

forming a diffusion inhibiting layer on said etching layer;

forming a semiconductor layer on said diffusion inhibiting layer;

selectively doping said semiconductor layer with a dopant;

patterning said semiconductor layer by photolithographic etching to form holes for introducing an etchant, said plurality of electrode sections, said electrical insulation section, and said supporting bodies; and

forming said gap and said semiconductor layer as the movable portion by removing said etching layer using said etchant.

2. The manufacturing method of the semiconductor micromachine according to claim 1, wherein said diffusion inhibiting layer is patterned.

3. The manufacturing method of the semiconductor micromachine according to claim 1, wherein said diffusion inhibiting layer is provided with dopant diffusion windows through which the dopant is diffused into said semiconductor layer.

4. The manufacturing method of the semiconductor micromachine according to claim 1, wherein said diffusion inhibiting layer is selected from a silicon nitridation film, a silicon nitridation oxidation film and a boron glass film.

5. The manufacturing method of the semiconductor micromachine according to claim 1, wherein said etching layer is a phosphorous glass film or an arsenic glass film.

6. The manufacturing method of the semiconductor micromachine according to claim 1, wherein said substrate is selected from a monocrystal silicon substrate, a polycrystal silicon substrate, a quartz glass substrate, a monocrystal sapphire substrate and a stainless steel substrate.

7. A manufacturing method of a semiconductor micromachine having a substrate, a movable portion arranged opposite said substrate with a gap interposed therebetween, said movable portion comprising a semiconductor and having a plurality of electrode sections and an electrical insulation section interconnecting the electrode sections, and supporting bodies which floatably support said movable portion, comprising the steps of:

forming an etching layer comprising one of a Ge thin film and a Si—

Ge mixed crystal thin film on said substrate;

forming a semiconductor layer comprising at least one element of the fourth group of elements in the periodic table on said etching layer;

selectively doping said semiconductor layer with a dopant;

patterning said semiconductor layer by photolithographic etching to form holes for introducing an etchant, said plurality of electrode sections, said electrical insulation section, and said supporting bodies; and

forming said gap and said semiconductor layer as the movable portion by removing said etching layer using said etchant.

8. The manufacturing method of the semiconductor micromachine according to claim 7, wherein said etching layer is made of a Si—

Ge mixed crystal thin film, and wherein said etching layer contains a higher percentage of Ge than said semiconductor thin film.

9. The manufacturing method of the semiconductor micromachine according to claim 7, wherein the etchant used to remove said etching layer is made of at least one material selected from oxygenated water, mixture of oxygenated water and sulfuric acid, and mixture of oxygenated water and hydrofluoric acid.

10. The manufacturing method of the semiconductor micromachine according to claim 7, wherein said etching layer is removed by means of a thermal treatment in oxygen atmosphere.

11. The manufacturing method of the semiconductor micromachine according to claim 7, wherein said etching layer is an undoped Ge thin film or a Si—

Ge mixed crystal thin film.

12. The manufacturing method of the semiconductor micromachine according to claim 7, wherein said etching layer is an n-type Ge thin film or an n-type Si—

Ge mixed crystal thin film, and wherein said etching layer contains an n-type dopant that is at least one material selected from phosphorus (P), arsenic (As) and antimony (Sb).

13. The manufacturing method of the semiconductor micromachine according to claim 12, wherein the n-type dopant in said etching layer has a density equal to or lower than 10²⁰ cm⁻

3.

14. The manufacturing method of the semiconductor micromachine according to claim 7, wherein said etching layer is a p-type Ge thin film or a p-type Si—

Ge mixed crystal thin film, and wherein said etching layer contains a p-type dopant that is at least one material selected from boron (B), gallium (Ga) and indium (In).

15. The manufacturing method of the semiconductor micromachine according to claim 14, wherein the p-type dopant in said etching layer has a density equal to or lower than 10²⁰ cm⁻

3.

16. The manufacturing method of the semiconductor micromachine according to claim 7, wherein said etching layer is made of a Si—

Ge mixed crystal thin film, and wherein said Si—

Ge mixed crystal thin film contains 20 or more atm (atomic) % of Ge.

17. The manufacturing method of the semiconductor micromachine according to claim 7, wherein said etching layer is made of a Si—

Ge mixed crystal thin film, and wherein the semiconductor thin film constituting the movable portion contains 80 or less atm (atomic) % of Ge.

18. The manufacturing method of the semiconducor micromachine according to claim 7, wherein said substrate is provided with a selective growth mask for selectively forming the etching layer, and wherein said selective growth mask is made of a Si oxidation film or a Si nitridation film.