Resist pattern forming method
First Claim
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1. A resist pattern forming method, said resist pattern having a first region and a second region different in at least one of a pattern size and a pattern density from said first region, comprising the steps of:
- forming a resist film on one major surface of a substrate;
irradiating said resist film with exposure light via a photomask to expose said resist film; and
developing said exposed resist film, wherein said photomask includes;
a first pattern portion corresponding to said first region and having a light-transmitting portion, and a second pattern portion corresponding to said second region, having a light-transmitting portion, and being different in at least one of a pattern size and a pattern density from said first pattern portion;
wherein the step of forming said resist film is performed such that a thickness of said first region and a thickness of said second region are different from each other.
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Abstract
A resist pattern forming method according to this invention is characterized by forming a resist film to have different thicknesses in one region and the other region in accordance with the pattern size or pattern density of a photomask. The resist pattern forming method according to this invention is characterized by selectively forming a resist film in part of a substrate region by applying a resist in part of the region without applying the resist in the remaining region. The resist pattern forming method according to this invention is characterized by selectively forming a resist film on part of a substrate on the basis of the intensity of exposure light observed at the resist film.
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Citations
11 Claims
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1. A resist pattern forming method, said resist pattern having a first region and a second region different in at least one of a pattern size and a pattern density from said first region, comprising the steps of:
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forming a resist film on one major surface of a substrate;
irradiating said resist film with exposure light via a photomask to expose said resist film; and
developing said exposed resist film, wherein said photomask includes;
a first pattern portion corresponding to said first region and having a light-transmitting portion, and a second pattern portion corresponding to said second region, having a light-transmitting portion, and being different in at least one of a pattern size and a pattern density from said first pattern portion;
whereinthe step of forming said resist film is performed such that a thickness of said first region and a thickness of said second region are different from each other. - View Dependent Claims (2, 3, 4, 5)
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6. A resist pattern forming method comprising the steps of:
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selectively applying a resist to a part of one major surface of a semiconductor substrate to form a resist film such that an applied region, where said resist is applied, and a non-applied region, where said resist is not applied, are formed in the major surface of the substrate;
exposing said resist film using a photomask; and
developing said exposed resist film, wherein said method satisfies at least one condition selected from the group consisting of;
a first condition that one major surface of said substrate comprises an alignment mark used for alignment in the exposing step and the non-applied region includes said alignment mark; and
a second condition that said applied region includes a region corresponding to a plurality of semiconductor chips formed from said semiconductor substrate. - View Dependent Claims (7)
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8. A resist pattern forming method comprising the steps of:
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forming a resist film on one major surface of a substrate;
irradiating said resist film with exposure light via a photomask to expose said resist film, and developing said exposed resist film, wherein said resist film is made by using a positive resist, said major surface of the substrate consists of a first region where an intensity substantially equal to an intensity of the exposure light incident on said photomask is observed, and a second region other than said first region, and said resist film forming step comprises applying said resist on the second region, without applying on at least part of the first region. - View Dependent Claims (9)
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10. A resist pattern forming method comprising the steps of:
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forming a resist film on one major surface of a substrate, irradiating said resist film with exposure light via a photomask to expose said resist film, and developing said exposed resist film, wherein said resist film is made by using a negative resist, said major surface of the substrate consists of a first region where an intensity of the exposure light observed is substantially equal to zero, and a second region other than said first region, wherein said resist film forming step comprises applying said resist on the first region, without applying said resist on at least part of the second region. - View Dependent Claims (11)
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Specification
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Current AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
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Original AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
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InventorsIto, Shinichi, Okumura, Katsuya, Kawano, Kenji
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Primary Examiner(s)Duda, Kathleen
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Assistant Examiner(s)BARRECA, NICOLE M
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Application NumberUS09/098,469Time in Patent Office979 DaysField of Search430/325, 430/326US Class Current430/325CPC Class CodesG03F 1/30 Alternating PSM, e.g. Leven...G03F 1/32 Attenuating PSM [att-PSM], ...G03F 7/16 Coating processes; Apparatu...
