Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same

• US 6,191,447 B1
• Filed: 05/28/1999
• Issued: 02/20/2001
• Est. Priority Date: 05/28/1999
• Status: Expired due to Term

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Micro-Ohm Corp. (ON Semiconductor Corporation)
• Inventors: Baliga, Bantval Jayant
• Primary Examiner(s): LOKE, STEVEN HO YIN
• Application Number:
  US09/322,424
• Time in Patent Office: 634 Days
• Field of Search: 257/329, 257/330, 257/333, 257/471, 257/481, 257/475
• US Class Current: 257/330
• CPC Class Codes: H01L 29/42368 the thickness being non-uniform
• CPC Class Codes: H01L 29/66143 Schottky diodes
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/872 Schottky diodes
• CPC Class Codes: H01L 29/8725 of the trench MOS barrier type [TMBS]

Abstract

Power semiconductor devices having tapered insulating regions include a drift region of first conductivity type therein and first and second trenches in the substrate. The first and second trenches have first and second opposing sidewalls, respectively, that define a mesa therebetween into which the drift region extends. An electrically insulating region having tapered sidewalls is also provided in each of the trenches. The tapered thickness of each of the electrically insulating regions enhances the degree of uniformity of the electric field along the sidewalls of the trenches and in the mesa and allows the power device to support higher blocking voltages despite a high concentration of dopants in the drift region. In particular, an electrically insulating region lines the first sidewall of the first trench and has a nonuniform thickness T_ins(y) in a range between about 0.5 and 1.5 times T_ideal(y), where T_ideal(y)|_y≧α=ε_ins((2ε_sE_cr/qW_mN_d)(y−α)−¼W_m)/ε_s and ε_ins is the permittivity of the electrically insulating region, ε_s is the permittivity of the drift region, E_cr is the breakdown electric field strength of the drift region, q is the electron charge, N_d is the first conductivity type doping concentration in the drift region, W_m is a width of the mesa, y is the depth, relative to a top of the first trench, at which the thickness of the electrically insulating region is being determined and α is a constant. The constant α may equal zero in the event the power device is a Schottky rectifier and may equal the depth of the P-base region/N-drift region junction in the event the power device is a vertical MOSFET.

Claims

1. A power semiconductor device, comprising:

a semiconductor substrate having a drift region of first conductivity type therein;

a first trench and a second trench in said semiconductor substrate, said first and second trenches defining a drift region mesa of first conductivity type therebewteen that has a uniform lateral doping concentration therein extending from a sidewall of the first trench to an opposing sidewall of the second trench;

an electrically insulating region on a sidewall of said first trench, said electrically insulating region having a tapered sidewall that extends outwardly relative to a bottom of said first trench at an average slope in a range between about 500 Å

/μ

m and 1,500 Å

/μ

m relative to the sidewall of said first trench; and

an electrode on the tapered sidewall of said electrically insulating region;

wherein the drift region mesa has a uniform vertical doping concentration therein at a level greater than about 1×

10¹⁷/cm<sup>−

3</sup>; and

wherein a product of a width of the drift region mesa and the first conductivity type doping concentration in the drift region is in a range between about 5×

10¹² cm<sup>−

2</sup> and 7.5×

10¹² cm<sup>−

2</sup>.

2. The device of claim 1, wherein the drift region extends to a surface of said semiconductor substrate;

and wherein said electrode is electrically connected to an anode electrode that forms a Schottky rectifying junction with the drift region at the surface.

3. The device of claim 1, further comprising:

a base region of second conductivity type in said semiconductor substrate, said base region forming a first P-N rectifying junction with the drift region that extends to the sidewall of said first trench; and

a source region of first conductivity type in said semiconductor substrate, said source region forming a second P-N rectifying junction with said base region that extends to the sidewall of said first trench.

4. The device of claim 3, wherein the sidewall of said first trench defines an interface between said base region and said electrically insulating region;

wherein the tapered sidewall of said electrically insulating region extends opposite said base region; and

wherein a first thickness of said electrically insulating region at a location extending opposite the first P-N rectifying junction is greater than a second thickness of said electrically insulating region at a location extending opposite the second P-N rectifying junction.

5. The device of claim 3, further comprising an insulated gate electrode in said first trench, extending opposite said base region;

wherein said electrode comprises a buried source electrode that extends between said insulated gate electrode and a bottom of said first trench; and

wherein said buried source electrode is electrically connected to said source region.

6. A power semiconductor device, comprising:

a semiconductor substrate having a drift region of first conductivity type therein;

first and second trenches in said substrate, said first and second trenches having first and second opposing sidewalls, respectively, that define a mesa therebetween into which the drift region extends;

an electrically insulating region lining the first sidewall of said first trench and having a nonuniform thickness T_ins(y) in a range between about 0.5 and 1.5 times T_ideal(y), where;

7. The power semiconductor device of claim 6, further comprising an anode electrode that forms a Schottky rectifying junction with said mesa and is electrically connected to said electrode within said first trench.

8. The power semiconductor device of claim 6, further comprising:

a base region of second conductivity type in said semiconductor substrate, said base region forming a first P-N rectifying junction with the drift region that extends to the first sidewall of said first trench; and

a source region of first conductivity type in said semiconductor substrate, said source region forming a second P-N rectifying junction with said base region that extends to the first sidewall of said first trench; and

wherein a equals a depth of the first P-N rectifying junction.

9. The device of claim 8, further comprising an insulated gate electrode in said first trench, extending opposite said base region;

wherein said electrode comprises a buried source electrode that extends between said insulated gate electrode and a bottom of said first trench; and

wherein said buried source electrode is electrically connected to said source region.