Apparatus and method of improving an insulating film on a semiconductor device

• US 6,191,463 B1
• Filed: 07/14/1998
• Issued: 02/20/2001
• Est. Priority Date: 07/15/1997
• Status: Expired due to Term

• Current Assignee: Toshiba Memory Corporation (Kioxia Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Mitani, Yuichiro, Toriumi, Akira, Satake, Hideki
• Primary Examiner(s): Hardy, David
• Application Number:
  US09/115,233
• Time in Patent Office: 952 Days
• Field of Search: 257/410, 257/411
• US Class Current: 257/411
• CPC Class Codes: H01L 21/2254 from or through or into an applied layer, e.g. photoresist, nitrides
• CPC Class Codes: H01L 21/2257 the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
• CPC Class Codes: H01L 21/28176 with a treatment, e.g. annealing, after the formation of the definitive gate conductor
• CPC Class Codes: H01L 21/28211 in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer H01L21/28194 and H01L21/28202 take precedence
• CPC Class Codes: H01L 21/823814 with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
• CPC Class Codes: H01L 21/823857 with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
• CPC Class Codes: H01L 29/665 using self aligned silicidation, i.e. salicide formation of conductive layers comprising silicides H01L21/28518
• CPC Class Codes: H01L 29/6659 with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
• CPC Class Codes: H01L 29/66772 Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates H01L29/66666 takes precedence; thin film FinFETs H01L29/66795
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78609 for preventing leakage current H01L29/78618 takes precedence
• CPC Class Codes: H01L 29/94 Metal-insulator-semiconductors, e.g. MOS

Abstract

A semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, and an electrode formed on the first insulating film. The first insulating film contains a halogen element and a combination of silicon and nitrogen or a combination of silicon, oxygen, and nitrogen. The maximum concentration of the halogen element in the first insulating film ranges from 10²⁰ atoms/cm³ to 10²¹ atoms/cm³ inclusive. With this structure, the dielectric breakdown strength and the like of the insulating film increase, and the reliability of the insulating film improves.

Claims

1. A semiconductor device comprising:

a semiconductor substrate;

a first insulating film formed on said semiconductor substrate;

an electrode formed on said first insulating film, said electrode comprising a first sub-electrode formed on said first insulating film, a second insulating film formed on said first sub-electrode, and a second sub-electrode formed on said second insulation film; and

a pair of impurity diffusion layers containing a halogen element and formed on said semiconductor substrate extending along two ends of said electrode so as to interpose said electrode therebetween,

wherein each of said first insulating film and second insulating film contains the halogen element and any one of a combination of silicon and nitrogen and a combination of silicon, oxygen, and nitrogen, and a maximum concentration of the halogen element in said first insulating film ranges from 10²⁰ atoms/cm³ to 10²¹ atoms/cm³ inclusive.

2. A device according to claim 1, wherein the halogen element is fluorine.

3. A device according to claim 1, wherein said semiconductor substrate, said insulating film, and said electrode constitute a capacitor.

4. A semiconductor device comprising:

a semiconductor substrate;

a first insulating film formed on said semiconductor substrate and containing a halogen element;

a gate electrode formed on said first insulating film, said gate electrode comprising a first electrode formed on said first insulating film, a second insulating film formed on said first electrode and containing the halogen element, and a second electrode formed on said second insulation film; and

a pair of impurity diffusion layers formed on said semiconductor substrate extending along two end portions of said electrode,

wherein halogen element concentrations near an interface between said first insulating film and said semiconductor substrate and an interface between said first insulating film and said gate electrode are not less than a halogen element concentration near a central portion of said first insulating film in a direction of thickness, halogen element concentrations near an interface between said second insulating film and said first electrode and an interface between said second insulating film and said second electrode are not less than a halogen element concentration near a central portion of said second insulating film in a direction of thickness, each of said first insulating film and second insulating film further contains any one of a combination of silicon and nitrogen and a combination of silicon, oxygen, and nitrogen, and a concentration of the halogen element throughout said first insulating film and said second insulating film ranges from 10²⁰ atoms/cm³ to 10²¹ atoms/cm³ inclusive.

5. A device according to claim 4, wherein a maximum concentration of the halogen element in said first insulating film ranges from 10²⁰ atoms/cm³ to 10²¹ atoms/cm³ inclusive.

6. A device according to claim 4, wherein a maximum concentration of the halogen element in said second insulating film ranges from 10²⁰ atoms/cm³ to 10²¹ atoms/cm³ inclusive.

7. A semiconductor device comprising:

a semiconductor substrate;

a first insulating film formed on said semiconductor substrate;

an electrode formed on said first insulating film; and

a pair of impurity diffusion layers containing a halogen element and formed on said semiconductor substrate extending along two ends of said electrode so as to interpose said electrode therebetween,

wherein said first insulating film contains the halogen element and any one of a combination of silicon and nitrogen and a combination of silicon, oxygen, and nitrogen, and a maximum concentration of the halogen element in said first insulating film ranges from 10²⁰ atoms/cm³ to 10²¹ atoms/cm³ inclusive.

8. A semiconductor device comprising:

a semiconductor substrate;

a first insulating film formed on said semiconductor substrate; and

an electrode formed on said first insulating film,

wherein said first insulating film contains a halogen element and any one of a combination of silicon and nitrogen and a combination of silicon, oxygen, and nitrogen, and a concentration of the halogen element throughout said first insulating film ranges from 10²⁰ atoms/cm³ to 10²¹ atoms/cm³ inclusive, and said semiconductor substrate, said insulating film, and said electrode constituting a capacitor.

9. A semiconductor device comprising:

a semiconductor substrate;

a gate insulating film formed on said semiconductor substrate; and

an electrode formed on said gate insulating film,

wherein said gate insulating film contains fluorine and any one of a combination of silicon and nitrogen and a combination of silicon, oxygen, and nitrogen, and a concentration of fluorine throughout said gate insulating film ranges from 10²⁰ atoms/cm³ to 10²¹ atoms/cm³ inclusive.

10. A semiconductor device comprising:

a semiconductor substrate;

a first insulating film formed on said semiconductor substrate;

an electrode formed on said first insulating film; and

a pair of impurity diffusion layers formed on said semiconductor substrate extending along two ends of said electrode so as to interpose said electrode therebetween,

wherein said first insulating film contains a halogen element and any one of a combination of silicon and nitrogen and a combination of silicon, oxygen and nitrogen, and a concentration of the halogen element throughout said first insulating film ranges from 10²⁰ atoms/cm³ to 10²¹ atoms/cm³ inclusive.

11. The device according to claim 10, wherein said impurity diffusion layers contain the halogen element.