Semiconductor device and method of producing the same

• US 6,191,494 B1
• Filed: 06/29/1999
• Issued: 02/20/2001
• Est. Priority Date: 06/30/1998
• Status: Expired due to Term

• Current Assignee: Fujitsu Semiconductor Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Limited
• Inventors: Maki, Shinichiro, Fujisaki, Fumitoshi, Yano, Atsushi, Yatsuda, Yasuo, Ooyama, Nobuo, Matae, Youichi, Tetaka, Masafumi, Saigo, Yukio, Kuramoto, Syunichi, Tsuji, Kazuto
• Primary Examiner(s): Williams, Alexander O.
• Application Number:
  US09/342,500
• Time in Patent Office: 602 Days
• Field of Search: 257/690, 257/675, 257/691-693, 257/696, 257/698, 257/796, 257/712, 257/717, 257/720, 257/666, 257/676, 257/784, 257/684, 257/787, 257/788, 257/667, 257/706-708, 257/713, 257/730, 362/813, 362/808
• US Class Current: 257/796
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/32257 the layer connector connecting to a bonding area disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48464 the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83001 involving a temporary auxiliary member not forming part of the bonding apparatus
• CPC Class Codes: H01L 2224/85001 involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 2224/92 Specific sequence of method steps
• CPC Class Codes: H01L 2224/92247 the second connecting process involving a wire connector
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/1815 : Shape
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H05K 3/20 : by affixing prefabricated conductor pattern H05K1/187, H05K3/046, H05K3/4658, H05K3/4682 takes precedence
• CPC Class Codes: H05K 3/4007 : Surface contacts, e.g. bumps H05K3/4092 takes precedence; deposition of finish layers on pads H05K3/24; forming solder bumps H05K3/3457

Abstract

A semiconductor device and a method of producing the same are provided. The semiconductor device includes: a semiconductor chip; a resin package which seals the semiconductor chip; signal passages which guide the signal terminals of the semiconductor chip outward from the resin package; a grounding metal film in contact with the bottom surface of the semiconductor chip; and a grounding passage which is connected to the grounding metal film and guided outward from the resin package.

Claims

1. A semiconductor device comprising:

a semiconductor chip;

a resin package which seals the semiconductor chip;

signal passages which guide signal terminals of the semiconductor chip outward from the resin package;

signal terminals formed on first protrusions of the resin package and connected to the signal passages;

a grounding metal film on a second protrusion of the semiconductor chip, said second protrusion having an area wider than that of the semiconductor chip; and

a grounding passage connected to the grounding metal film and guided outward from the resin package.

2. The semiconductor device according to claim 1, wherein a surface of the grounding metal film opposite to a surface thereof in contact with the bottom surface of the semiconductor chip is exposed from the resin package, thereby forming the grounding passage.

3. The semiconductor device according to claim 1, wherein the grounding metal film is connected to a terminal exposed outside the resin package by a conductive wire or a conductive film, thereby forming the grounding passage.

4. The semiconductor device according to claim 1, wherein:

the resin package has a plurality of said first protrusions covered with metal films on a mounting surface thereof; and

the metal films covering the first protrusions are connected to the signal terminals of the semiconductor chip by conductive wires, thereby forming the signal passages.

5. The semiconductor device according to claim 4, wherein the metal films are disposed on inner surfaces of the concavities and on flat regions in neighborhood areas of the concavities.

6. The semiconductor device according to claim 4, wherein:

the resin package is provided with a grounding protrusion in an area surrounded by the first protrusions on the mounting surface; and

the grounding metal film in contact with the bottom surface of the semiconductor chip is exposed outside the resin package through the grounding protrusion.

7. The semiconductor device according to claim 5, wherein

the resin package is provided with a grounding protrusion in an area surrounded by the first protrusions on the mounting surface;

and

the grounding metal film in contact with the bottom surface of the semiconductor chip is exposed outside the resin package through the grounding protrusion.

8. The semiconductor device according to claim 1, wherein the first and second protrusions are located on a bottom side of the resin package.