Deposition of coatings using an atmospheric pressure plasma jet

• US 6,194,036 B1
• Filed: 10/20/1998
• Issued: 02/27/2001
• Est. Priority Date: 10/20/1997
• Status: Expired due to Term

• Current Assignee: TRIAD National Security, LLC
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Selwyn, Gary S., Hicks, Robert F., Babayan, Steve E.
• Primary Examiner(s): MEEKS, TIMOTHY HOWARD
• Application Number:
  US09/176,046
• Time in Patent Office: 861 Days
• Field of Search: 427/563, 427/579, 427/580
• US Class Current: 427/563
• CPC Class Codes: C23C 16/513 using plasma jets
• CPC Class Codes: H05H 1/245 the plasma being activated using internal electrodes
• CPC Class Codes: H05H 1/42 with provisions for introducing materials into the plasma, e.g. powder, liquid arc stabilising or constricting arrangements H05H1/3405; coaxial protecting fluids H05H1/341; electrostatic spraying, spraying apparatus with means for charging the spray electrically B05B5/00 ; cf. B23K9/324, B05B7/22
• CPC Class Codes: H05H 1/4697 using glow discharges

Abstract

Deposition of coatings using an atmospheric pressure plasma jet. The use of a nonthermal source which is capable of operation at 760 torr is demonstrated. As an example of the application of the present invention, a helium/oxygen gas mixture is introduced into the annular region between two coaxial electrodes driven by a 13.56 MHz radio frequency (rf) source at between 40 and 500 W to produce a stable plasma jet. Silicon dioxide films are deposited by introducing tetraethoxysilane (TEOS) into the effluent stream. A deposition rate of 3020±250 Å/min. is achieved with an rf power of 400 W, 0.2 torr of TEOS, 11.1 torr of oxygen, 748.7 torr of helium, and a total gas flow rate of 41 L/min. The deposition rate depends on the oxygen partial pressure, the TEOS partial pressure, and the rf power to the 0.28, 0.47, and 1.41 powers, respectively. However, increasing the temperature decreases the deposition rate. The observed dielectric constants of the films decrease from 5.0±0.2 to 3.81±0.03 as the deposition temperature increases from 115 to 350° C. Infrared spectra of the deposited films at 350° C. show no carbon or hydroxyl ion contamination, indicating excellent material purity.

Claims

1. A method for depositing a material onto a substrate, comprising the steps of:

(a) generating at least one reactive species in an arcless, atmospheric-pressure, RF plasma discharge in a gas flowing through an annular region between an electrically conducting chamber having a closed end and an open end and a metal electrode located within the chamber and disposed such that the annular region is defined therebetween, whereby said at least one reactive species [flow] flows toward the open end of the chamber;

(b) introducing a gaseous precursor species of said material into said at least one reactive species within the chamber in the region of the open end thereof and outside of the plasma discharge, said gaseous precursor species being chosen such that said precursor species reacts with at least one of said at least one reactive species, whereby a gaseous jet capable of forming said material exits through the open end of the chamber; and

(c) placing said substrate in the path of the gaseous jet, whereby said material is deposited on said substrate.

2. The method for depositing a material onto a substrate as described in claim 1, whereby substantially all ions generated in the atmospheric-pressure, plasma discharge are consumed therein in the region where the gaseous jet exits the open end of the chamber.

3. The method for depositing a material onto a substrate as described in claim 1, wherein said flowing gas includes an O₂/He mixture.

4. The method for depositing a material onto a substrate as described in claim 3, wherein said gaseous precursor species includes tetraethoxysilane, and said material is SiO₂.

5. The method for depositing a material onto a substrate as described in claim 3, wherein said substrate is silicon.

6. The method for depositing a material onto a substrate as described in claim 3, wherein 13.56 MHz rf energy is applied to the electrode, and the electrically conducting chamber is grounded.