Low-profile microelectronic package

• US 6,194,250 B1
• Filed: 09/14/1998
• Issued: 02/27/2001
• Est. Priority Date: 09/14/1998
• Status: Expired due to Term

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Demet, George N., Melton, Cynthia M., Turlik, Iwona
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Chambliss, Alonzo
• Application Number:
  US09/152,899
• Time in Patent Office: 897 Days
• Field of Search: 438/127, 438/126, 438/613, 438/124, 438/122, 438/108, 438/123, 438/121, 438/106, 438/120, 438/26, 438/51, 438/55, 438/64, 257/738, 257/787, 257/684, 257/686
• US Class Current: 438/126
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/85001 involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
• CPC Class Codes: H01L 2224/854 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
• CPC Class Codes: H01L 23/3128 the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/1532 : the connection portion being formed on the die mounting surface of the substrate
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/18165 : of a wire bonded chip
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

A microelectronic package (10) is formed by placing a lead frame (22) onto an adhesive polyimide tape (38). The lead frame (22) includes a plurality of metallic leads (16) and an opening. An integrated circuit die (12) is positioned onto the molding support (38) within the opening such that a non-active face (32) of the integrated circuit die (12) rests against the molding support (38). Wire leads (18) connect an active face (28) of the integrated circuit die (12) to the metallic leads (16). A plurality of metallic bumps (20) are attached to the metallic leads (16), and a polymeric precursor is dispensed. The precursor embeds the active face (28) of the integrated circuit die (12), the inner surface (19) of the metallic leads (16), the wire leads (18), and the metallic bumps (20). The microelectronic package (10) is then heated to cure the polymeric precursor to form a polymeric body (14). The microelectronic package (10) is then capable of being tested and subsequently attached to printed circuit board (40) to form a low-profile microelectronic assembly (11).

Claims

1. A method for forming a microelectronic package, the method comprising:

placing a lead frame onto a molding support, the lead frame comprising a plurality of metallic leads, each said metallic lead comprising an end;

positioning an integrated circuit die onto the molding support proximate to the ends of the metallic leads, the integrated circuit die comprising a non-active face resting against the molding support and an active face facing away from the molding support, the active face comprising die bond pads;

connecting the die bond pads to the metallic leads with a plurality of wire leads;

attaching a plurality of metallic bumps onto the metallic leads; and

molding a polymeric material against the molding support to form a polymeric body and to concurrently embed the active face, the plurality of wire leads, and the metallic bumps except for a bonding surface of the metallic bumps within the polymeric body, whereby the microelectronic package comprises the metallic leads, the integrated circuit die, the wire leads, the metallic bumps, and the polymeric body.

2. A method for forming a microelectronic package in accordance with claim 1, wherein the step of connecting the die bond pads to the metallic leads comprises connecting each said die bond pad to a corresponding metallic lead.

3. A method for forming a microelectronic package in accordance with claim 1, wherein the step of molding comprises the steps of:

dispensing a polymeric precursor, wherein the polymeric precursor embeds the active face, the plurality of wire leads, and the metallic bumps; and

curing the polymeric precursor to form the polymeric body.

4. A method for forming a microelectronic package in accordance with claim 3, wherein the metallic bumps have a melting temperature at which the metallic bumps liquefy, and wherein the step of curing the polymeric precursor is carried out at a temperature lower than the melting temperature of the metallic bumps.

5. A method for forming a microelectronic package, the method comprising:

placing a lead frame onto a molding support, the lead frame comprising an outer ring element and a plurality of metallic leads connected to the outer ring element and extending inwardly, each said metallic lead comprising an end, the ends defining an opening;

positioning an integrated circuit die onto the molding support within the opening, the integrated circuit die comprising an active face, a non-active face opposite the active face, and a plurality of die bond pads located on the active face;

connecting the die bond pads to the metallic leads with a plurality of wire leads;

ultrasonic scrub bonding a plurality of solder bumps onto the metallic leads;

dispensing a polymeric precursor, wherein the polymeric precursor embeds the active face, the plurality of wire leads, and the solder bumps except for a banding surface of the metallic bumps; and

curing the polymeric precursor to form a polymeric body, wherein the polymeric body, the integrated circuit die, the metallic leads, the wire leads, and the solder bumps combine to form a microelectronic package.

6. A method for forming a microelectronic assembly in accordance with claim 5, further comprising the step of, subsequent to the step of curing the polymeric precursor, trimming the polymeric body and the metallic leads to form a perimeter in the polymeric body and a perimeter end in each said metallic lead, wherein the perimeter of the polymeric body and the perimeter end of each said metallic lead are coextensive.

7. A method for forming a microelectronic assembly in accordance with claim 5, wherein the step of trimming separates the outer ring element from the metallic leads.

8. A method for forming a microelectronic package, the method comprising:

placing a lead frame onto a molding support, the lead frame comprising a plurality of metallic leads, each said metallic lead comprising an end;

positioning an integrated circuit die onto the molding support proximate to the ends of the metallic leads, the integrated circuit die comprising a non-active face resting against the molding support and an active face facing away form the molding support, the active face comprising die bond pads;

connecting the die bond pads to the metallic leads with a plurality of wire leads;

attaching a plurality of metallic bumps onto the metallic leads;

molding a polymeric material against the molding support to form a polymeric body and to concurrently embed the active face, the plurality of wire leads, and the metallic bumps except for a bonding surface of the metallic bumps within the polymeric body; and

trimming the polymeric body and the lead frame to form a perimeter of the polymeric body and a perimeter end in each said metallic lead, wherein the perimeter of the polymeric body and the perimeter end of each said metallic lead are coextensive.

9. A method for forming a microelectronic package in accordance with claim 8, wherein each said metallic bump is attached between a wire lead and the perimeter end.

10. A method for forming a microelectronic package in accordance with claim 8, wherein the lead frame includes an outer ring element, and wherein the step of trimming separates the outer ring element from the metallic leads.

11. A method for forming a microelectronic package in accordance with claim 8, wherein the plurality of metallic bumps are attached via an ultrasonic scrub bonding.

12. A method for forming a microelectronic package in accordance with claim 8, further comprising the step of removing the microelectronic package from the molding support.