Method of fabrication of an infrared radiation detector and infrared detector device

• US 6,194,722 B1
• Filed: 03/27/1998
• Issued: 02/27/2001
• Est. Priority Date: 03/28/1997
• Status: Expired due to Term

• Current Assignee: IMEC International
• Original Assignee: Interuniversitair Micro-Electronica Centrum VZW (IMEC International)
• Inventors: Fiorini, Paolo, Sedky, Sherif, Caymax, Matty, Baert, Christiaan
• Primary Examiner(s): Hannaher, Constantine
• Assistant Examiner(s): Israel, Andrew
• Application Number:
  US09/049,797
• Time in Patent Office: 1,068 Days
• Field of Search: 250/338.1, 250/332, 250/495.1, 250/338.4
• US Class Current: 250/338.1
• CPC Class Codes: B81C 1/00666 Treatments for controlling internal stress or strain in MEMS structures
• CPC Class Codes: B81C 2201/017 Methods for controlling internal stress of deposited layers not provided for in B81C2201/0164 - B81C2201/0169
• CPC Class Codes: G01J 5/20 using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
• CPC Class Codes: H01L 31/09 Devices sensitive to infrared, visible or ultraviolet radiation H01L31/101 takes precedence
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A method of fabricating an infrared detector, a method of controlling the stress in a polycrystalline SiGE layer and an infrared detector device is disclosed. The method of fabricating includes the steps of forming a sacrificial layer on a substrate; patterning said sacrificial layer; establishing a layer consisting essentially of polycrystalline SiGe on said sacrificial layer; depositing an infrared absorber on said polycrystalline SiGe layer; and thereafter removing the sacrificial layer. The method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate is based on varying the deposition pressure. The infrared detector device comprises an active area and an infrared absorber, wherein the active area comprises a polycrystalline SiGe layer, and is suspended above a substrate.

Claims

1. A method of fabricating an infrared sensitive bolometer, comprising the steps of:

forming a sacrificial layer on a substrate;

patterning said sacrificial layer;

simultaneously establishing an active layer and at least two connectors, the connectors electrically contacting the active layer with circuitry on the substrate, the active layer and the connectors consisting essentially of a single material on said sacrificial layer; and

removing the sacrificial layer.

2. A method as recited in claim 1, wherein the step of establishing said active layer and at least two connectors includes the step of:

patterning said single material layer, thereby forming an active area and supports of the active layer.

3. The method as recited in claim 2, wherein the step of establishing said active layer and at least two connectors further includes the step of:

doping the active layer and the at least two connectors.

4. The method as recited in claim 3, wherein the step of doping the active layer and the at least two connectors includes moderately doping the active area and the at least two connectors.

5. The method as recited in claim 1, wherein said step of patterning the sacrificial layer includes the step of defining anchor points and wherein said step of establishing an active layer includes the step of depositing an active layer.

6. The method as recited in claim 1, further comprising the step of:

depositing one or more intermediate layers on said substrate prior to depositing said sacrificial layer.

7. The method as recited in claim 6, wherein the one or more intermediate layers include at least an etch stop layer.

8. The method as recited in claim 1, wherein the substrate is a Si substrate.

9. The method as recited in claim 1, wherein the sacrificial layer includes porous silicon.

10. The method as recited in claim 1, wherein the sacrificial layer is formed with the deposition and the patterning of an insulating layer made of an oxide.

11. The method as recited in claim 1, wherein the active layer is made of polycrystalline Si_70% Ge_30%.

12. The method as recited in claim 11, wherein the active layer is deposited by chemical vapour deposition.

13. The method as recited in claim 11, wherein the active layer is deposited at atmospheric or reduced pressure.

14. The method as recited in claim 1, further comprising the step of depositing an infrared absorber on said single material and wherein the infrared absorber is obtained by depositing at least a semitransparent metallic layer.

15. The method as recited in claim 1, further comprising the step of depositing an infrared absorber on said single material and wherein the infrared absorber is obtained by depositing at least a metallic layer and an insulating layer.

16. The method as recited in claim 1, further comprising the step of depositing an infrared absorber on said single material and wherein the infrared absorber is obtained by depositing at least a metallic layer, an insulating layer and a semitransparent metallic layer.

17. The method as recited in claim 1, wherein the at least two connectors include at least two supports.

18. The method as recited in claim 1, wherein the single material is polycrystalline SiGe.

19. The method as recited in claim 1, wherein the step of establishing an active layer and at least two connectors consists of the steps of depositing and patterning the active layer and the at least two connectors.

20. The method as recited in claim 1, further comprising the step of depositing an infrared absorber on said single material.

21. The method as recited in claim 1, further comprising the step of doping.

22. The method as recited in claim 21, wherein the step of doping includes performing a high doping of the at least two connectors.

23. The method as recited in claim 21, wherein the step of doping includes performing a moderate doping of the active area and the at least two connectors.

24. Infrared sensitive bolometer, comprising an active area and at least two connectors, wherein said active area and said at least two connectors consist essentially of a single material, and is suspended above a substrate.

25. Infrared sensitive bolometer as recited in claim 24, further comprising an infrared absorber, wherein the single material is polycrystalline SiGe and wherein a thin layer of silicon nitride is located between the polycrystalline SiGe layer and the infrared absorber.

26. Infrared sensitive bolometer as recited in claims 24, further comprising an infrared absorber and wherein the infrared absorber comprises at least a semitransparent metallic layer.

27. Infrared sensitive bolometer as recited in claim 24, further comprising an infrared absorber and wherein the infrared absorber comprises a metallic layer and an insulating layer.

28. Infrared sensitive bolometer as recited in claim 24, further comprising an infrared absorber and wherein the infrared absorber includes at least a metallic reflector, an insulating layer and a semitransparent metallic layer.

29. An infrared camera comprising an array of pixels, each of them containing a bolometer as recited in claim 24, and readout means.

30. Infrared sensitive bolometer as recited in claim 24, wherein the single material is polycrystalline SiGe.

31. Infrared sensitive bolometer as recited in claim 24, further comprising an infrared absorber.

32. Infrared sensitive bolometer as recited in claim 24, wherein the at least two connectors is doped greater than the doping in the active area.

33. Infrared sensitive bolometer as recited in claim 32, wherein the at least two connectors is highly doped and wherein the active area is moderately doped.