Method of fabrication of an infrared radiation detector and infrared detector device
First Claim
1. A method of fabricating an infrared sensitive bolometer, comprising the steps of:
- forming a sacrificial layer on a substrate;
patterning said sacrificial layer;
simultaneously establishing an active layer and at least two connectors, the connectors electrically contacting the active layer with circuitry on the substrate, the active layer and the connectors consisting essentially of a single material on said sacrificial layer; and
removing the sacrificial layer.
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Abstract
A method of fabricating an infrared detector, a method of controlling the stress in a polycrystalline SiGE layer and an infrared detector device is disclosed. The method of fabricating includes the steps of forming a sacrificial layer on a substrate; patterning said sacrificial layer; establishing a layer consisting essentially of polycrystalline SiGe on said sacrificial layer; depositing an infrared absorber on said polycrystalline SiGe layer; and thereafter removing the sacrificial layer. The method of controlling the stress in a polycrystalline SiGe layer deposited on a substrate is based on varying the deposition pressure. The infrared detector device comprises an active area and an infrared absorber, wherein the active area comprises a polycrystalline SiGe layer, and is suspended above a substrate.
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Citations
33 Claims
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1. A method of fabricating an infrared sensitive bolometer, comprising the steps of:
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forming a sacrificial layer on a substrate;
patterning said sacrificial layer;
simultaneously establishing an active layer and at least two connectors, the connectors electrically contacting the active layer with circuitry on the substrate, the active layer and the connectors consisting essentially of a single material on said sacrificial layer; and
removing the sacrificial layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
patterning said single material layer, thereby forming an active area and supports of the active layer.
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3. The method as recited in claim 2, wherein the step of establishing said active layer and at least two connectors further includes the step of:
doping the active layer and the at least two connectors.
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4. The method as recited in claim 3, wherein the step of doping the active layer and the at least two connectors includes moderately doping the active area and the at least two connectors.
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5. The method as recited in claim 1, wherein said step of patterning the sacrificial layer includes the step of defining anchor points and wherein said step of establishing an active layer includes the step of depositing an active layer.
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6. The method as recited in claim 1, further comprising the step of:
depositing one or more intermediate layers on said substrate prior to depositing said sacrificial layer.
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7. The method as recited in claim 6, wherein the one or more intermediate layers include at least an etch stop layer.
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8. The method as recited in claim 1, wherein the substrate is a Si substrate.
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9. The method as recited in claim 1, wherein the sacrificial layer includes porous silicon.
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10. The method as recited in claim 1, wherein the sacrificial layer is formed with the deposition and the patterning of an insulating layer made of an oxide.
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11. The method as recited in claim 1, wherein the active layer is made of polycrystalline Si70% Ge30%.
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12. The method as recited in claim 11, wherein the active layer is deposited by chemical vapour deposition.
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13. The method as recited in claim 11, wherein the active layer is deposited at atmospheric or reduced pressure.
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14. The method as recited in claim 1, further comprising the step of depositing an infrared absorber on said single material and wherein the infrared absorber is obtained by depositing at least a semitransparent metallic layer.
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15. The method as recited in claim 1, further comprising the step of depositing an infrared absorber on said single material and wherein the infrared absorber is obtained by depositing at least a metallic layer and an insulating layer.
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16. The method as recited in claim 1, further comprising the step of depositing an infrared absorber on said single material and wherein the infrared absorber is obtained by depositing at least a metallic layer, an insulating layer and a semitransparent metallic layer.
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17. The method as recited in claim 1, wherein the at least two connectors include at least two supports.
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18. The method as recited in claim 1, wherein the single material is polycrystalline SiGe.
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19. The method as recited in claim 1, wherein the step of establishing an active layer and at least two connectors consists of the steps of depositing and patterning the active layer and the at least two connectors.
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20. The method as recited in claim 1, further comprising the step of depositing an infrared absorber on said single material.
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21. The method as recited in claim 1, further comprising the step of doping.
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22. The method as recited in claim 21, wherein the step of doping includes performing a high doping of the at least two connectors.
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23. The method as recited in claim 21, wherein the step of doping includes performing a moderate doping of the active area and the at least two connectors.
- 24. Infrared sensitive bolometer, comprising an active area and at least two connectors, wherein said active area and said at least two connectors consist essentially of a single material, and is suspended above a substrate.
Specification